FDD6782A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Packaging :

Tape and Reel (TR)

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

25V

Pulsed Drain Current-Max (IDM) :

100A

Vgs(th) (Max) @ Id :

3V @ 250µA

JESD-30 Code :

R-PSSO-G2

Terminal Position :

Single

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Avalanche Energy Rating (Eas) :

12 mJ

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

20A

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

Unknown

Qualification Status :

COMMERCIAL

Current - Continuous Drain (Id) @ 25°C :

20A Ta

Number of Terminations :

2

DS Breakdown Voltage-Min :

25V

Input Capacitance (Ciss) (Max) @ Vds :

1.065pF @ 13V

FET Type :

N-Channel

Series :

PowerTrench®

Drain-source On Resistance-Max :

0.0105Ohm

Power Dissipation-Max :

3.7W Ta 31W Tc

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

10.5m Ω @ 14.9A, 10V