FDD6780

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Pin Count :

3

Drain to Source Voltage (Vdss) :

25V

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

3V @ 250µA

Avalanche Energy Rating (Eas) :

20 mJ

Input Capacitance (Ciss) (Max) @ Vds :

1.59pF @ 13V

Number of Elements :

1

FET Type :

N-Channel

Power Dissipation-Max :

3.7W Ta 32.6W Tc

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Drain-source On Resistance-Max :

0.0085Ohm

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

25V

Qualification Status :

COMMERCIAL

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 16.5A, 10V

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

16.5A

Series :

PowerTrench®

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

70A

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

16.5A Ta 30A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)