FDD6770A
- Mfr.Part #
- FDD6770A
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- 24A, 25V, 0.004OHM, N-CHANNEL ,
- Stock
- 17,598
- In Stock :
- 17,598
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 27A
- Rise Time :
- 7ns
- Avalanche Energy Rating (Eas) :
- 50 mJ
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Width :
- 6.22mm
- Gate to Source Voltage (Vgs) :
- 20V
- Fall Time (Typ) :
- 5 ns
- Series :
- PowerTrench®
- Turn-Off Delay Time :
- 24 ns
- Number of Terminations :
- 2
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 47nC @ 10V
- Case Connection :
- DRAIN
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- 25V
- Height :
- 2.39mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain-source On Resistance-Max :
- 0.004ohm
- Operating Temperature :
- -55°C~175°C TJ
- ECCN Code :
- EAR99
- Drain Current-Max (Abs) (ID) :
- 24A
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 200A
- Power Dissipation-Max :
- 3.7W Ta 65W Tc
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 3.7W
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSSO-G2
- Mounting Type :
- Surface Mount
- RoHS Status :
- RoHS Compliant
- Length :
- 6.73mm
- Current - Continuous Drain (Id) @ 25°C :
- 24A Ta 50A Tc
- Rds On (Max) @ Id, Vgs :
- 4m Ω @ 24A, 10V
- Turn On Delay Time :
- 9 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 2405pF @ 13V
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Datasheets
- FDD6770A

N-Channel Tape & Reel (TR) 4m Ω @ 24A, 10V ±20V 2405pF @ 13V 47nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD6770A Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 50 mJ.A device's maximum input capacitance is 2405pF @ 13V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 27A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=25V, and this device has a drain-to-source breakdown voltage of 25V voltage.Its drain current is 24A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 24 ns.Its maximum pulsed drain current is 200A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
FDD6770A Features
the avalanche energy rating (Eas) is 50 mJ
a continuous drain current (ID) of 27A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 24 ns
based on its rated peak drain current 200A.
FDD6770A Applications
There are a lot of ON Semiconductor
FDD6770A applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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