FDD6760A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

25V

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 10V

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Turn-Off Delay Time :

28 ns

Turn On Delay Time :

10 ns

FET Type :

N-Channel

Power Dissipation :

3.7W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

3.7W Ta 65W Tc

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 27A, 10V

Resistance :

6mOhm

Avalanche Energy Rating (Eas) :

72 mJ

Mount :

Surface Mount

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

RoHS Status :

RoHS Compliant

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Series :

PowerTrench®

Current - Continuous Drain (Id) @ 25°C :

27A Ta 50A Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Contact Plating :

Tin

Number of Pins :

3

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Terminations :

2

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Weight :

260.37mg

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

200A

Input Capacitance (Ciss) (Max) @ Vds :

3170pF @ 13V

Continuous Drain Current (ID) :

27A

Rise Time :

9ns

Fall Time (Typ) :

6 ns

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)