FDD6690A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

30V

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Nominal Vgs :

1.9 V

Voltage - Rated DC :

30V

Number of Terminations :

2

Threshold Voltage :

1.9V

Lead Free :

Lead Free

Width :

6.22mm

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

12m Ω @ 12A, 10V

Turn On Delay Time :

10 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Length :

6.73mm

Series :

PowerTrench®

Height :

2.39mm

Rise Time :

7ns

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Power Dissipation :

3.3W

Factory Lead Time :

10 Weeks

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

12A Ta 46A Tc

Fall Time (Typ) :

12 ns

Input Capacitance (Ciss) (Max) @ Vds :

1230pF @ 15V

Resistance :

12mOhm

ECCN Code :

EAR99

Case Connection :

DRAIN

Power Dissipation-Max :

3.3W Ta 56W Tc

JESD-609 Code :

e3

Number of Pins :

3

Radiation Hardening :

No

Continuous Drain Current (ID) :

46A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Dual Supply Voltage :

30V

Vgs (Max) :

±20V

FET Type :

N-Channel

Published :

2017

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Number of Elements :

1

Mount :

Surface Mount

Weight :

260.37mg

Mounting Type :

Surface Mount

Current Rating :

46A

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

29 ns

Operating Temperature :

-55°C~175°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 18 hours ago)

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 5V

Vgs(th) (Max) @ Id :

3V @ 250µA

Additional Feature :

LOGIC LEVEL COMPATIBLE

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

Pbfree Code :

yes