FDD6682
- Mfr.Part #
- FDD6682
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 75A DPAK
- Stock
- 15,834
- In Stock :
- 15,834
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Drain to Source Voltage (Vdss) :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Case Connection :
- DRAIN
- Power Dissipation-Max :
- 71W Ta
- Terminal Position :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.4pF @ 15V
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Current - Continuous Drain (Id) @ 25°C :
- 75A Ta
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Qualification Status :
- COMMERCIAL
- Operating Mode :
- ENHANCEMENT MODE
- DS Breakdown Voltage-Min :
- 30V
- Peak Reflow Temperature (Cel) :
- 260
- Vgs (Max) :
- ±20V
- Avalanche Energy Rating (Eas) :
- 240 mJ
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Surface Mount :
- yes
- Drain-source On Resistance-Max :
- 0.0062Ohm
- FET Type :
- N-Channel
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- JESD-30 Code :
- R-PSSO-G2
- Pulsed Drain Current-Max (IDM) :
- 100A
- Drain Current-Max (Abs) (ID) :
- 75A
- Operating Temperature :
- -55°C~175°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 31nC @ 5V
- Number of Terminations :
- 2
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- MATTE TIN
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 6.2m Ω @ 17A, 10V
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- Series :
- PowerTrench®
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Datasheets
- FDD6682

N-Channel Tape & Reel (TR) 6.2m Ω @ 17A, 10V ±20V 2.4pF @ 15V 31nC @ 5V 30V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD6682 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 240 mJ.A device's maximal input capacitance is 2.4pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 75A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 100A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 30V.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
FDD6682 Features
the avalanche energy rating (Eas) is 240 mJ
based on its rated peak drain current 100A.
a 30V drain to source voltage (Vdss)
FDD6682 Applications
There are a lot of Rochester Electronics, LLC
FDD6682 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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