FDD6682

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Mfr.Part #
FDD6682
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 30V 75A DPAK
Stock
15,834
In Stock :
15,834

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Case Connection :
DRAIN
Power Dissipation-Max :
71W Ta
Operating Mode :
ENHANCEMENT MODE
Transistor Application :
SWITCHING
Pulsed Drain Current-Max (IDM) :
100A
Terminal Form :
Gull wing
Packaging :
Tape and Reel (TR)
JESD-609 Code :
e3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Finish :
MATTE TIN
Qualification Status :
COMMERCIAL
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs :
6.2m Ω @ 17A, 10V
JESD-30 Code :
R-PSSO-G2
Pbfree Code :
yes
Mounting Type :
Surface Mount
Peak Reflow Temperature (Cel) :
260
Input Capacitance (Ciss) (Max) @ Vds :
2.4pF @ 15V
Configuration :
SINGLE WITH BUILT-IN DIODE
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Vgs (Max) :
±20V
Drain to Source Voltage (Vdss) :
30V
Number of Terminations :
2
Pin Count :
3
Surface Mount :
yes
Operating Temperature :
-55°C~175°C TJ
Avalanche Energy Rating (Eas) :
240 mJ
Terminal Position :
Single
FET Type :
N-Channel
Series :
PowerTrench®
RoHS Status :
ROHS3 Compliant
DS Breakdown Voltage-Min :
30V
Drain-source On Resistance-Max :
0.0062Ohm
Time@Peak Reflow Temperature-Max (s) :
30
Number of Elements :
1
Gate Charge (Qg) (Max) @ Vgs :
31nC @ 5V
Transistor Element Material :
SILICON
Vgs(th) (Max) @ Id :
3V @ 250µA
Current - Continuous Drain (Id) @ 25°C :
75A Ta
Drain Current-Max (Abs) (ID) :
75A
Datasheets
FDD6682
Introducing Transistors - FETs, MOSFETs - Single onsemi FDD6682 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, Number of Terminations:2, Operating Temperature:-55°C~175°C TJ, FDD6682 pinout, FDD6682 datasheet PDF, FDD6682 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDD6682 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDD6682


N-Channel Tape & Reel (TR) 6.2m Ω @ 17A, 10V ±20V 2.4pF @ 15V 31nC @ 5V 30V TO-252-3, DPak (2 Leads + Tab), SC-63

FDD6682 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 240 mJ.A device's maximal input capacitance is 2.4pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 75A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 100A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 30V.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).

FDD6682 Features


the avalanche energy rating (Eas) is 240 mJ
based on its rated peak drain current 100A.
a 30V drain to source voltage (Vdss)


FDD6682 Applications


There are a lot of Rochester Electronics, LLC
FDD6682 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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