FDD6682
- Mfr.Part #
- FDD6682
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 75A DPAK
- Stock
- 15,834
- In Stock :
- 15,834
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- Avalanche Energy Rating (Eas) :
- 240 mJ
- Power Dissipation-Max :
- 71W Ta
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Vgs (Max) :
- ±20V
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 75A Ta
- Case Connection :
- DRAIN
- Pulsed Drain Current-Max (IDM) :
- 100A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Series :
- PowerTrench®
- Packaging :
- Tape and Reel (TR)
- Surface Mount :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- FET Type :
- N-Channel
- Drain Current-Max (Abs) (ID) :
- 75A
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DS Breakdown Voltage-Min :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Terminal Finish :
- MATTE TIN
- Terminal Position :
- Single
- Drain-source On Resistance-Max :
- 0.0062Ohm
- Number of Terminations :
- 2
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.4pF @ 15V
- Qualification Status :
- COMMERCIAL
- JESD-30 Code :
- R-PSSO-G2
- Rds On (Max) @ Id, Vgs :
- 6.2m Ω @ 17A, 10V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs :
- 31nC @ 5V
- Operating Temperature :
- -55°C~175°C TJ
- Drain to Source Voltage (Vdss) :
- 30V
- Datasheets
- FDD6682

N-Channel Tape & Reel (TR) 6.2m Ω @ 17A, 10V ±20V 2.4pF @ 15V 31nC @ 5V 30V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD6682 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 240 mJ.A device's maximal input capacitance is 2.4pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 75A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 100A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 30V.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
FDD6682 Features
the avalanche energy rating (Eas) is 240 mJ
based on its rated peak drain current 100A.
a 30V drain to source voltage (Vdss)
FDD6682 Applications
There are a lot of Rochester Electronics, LLC
FDD6682 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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