FDD6682
- Mfr.Part #
- FDD6682
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 75A DPAK
- Stock
- 15,834
- In Stock :
- 15,834
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- DRAIN
- Power Dissipation-Max :
- 71W Ta
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Pulsed Drain Current-Max (IDM) :
- 100A
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- MATTE TIN
- Qualification Status :
- COMMERCIAL
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Rds On (Max) @ Id, Vgs :
- 6.2m Ω @ 17A, 10V
- JESD-30 Code :
- R-PSSO-G2
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.4pF @ 15V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs (Max) :
- ±20V
- Drain to Source Voltage (Vdss) :
- 30V
- Number of Terminations :
- 2
- Pin Count :
- 3
- Surface Mount :
- yes
- Operating Temperature :
- -55°C~175°C TJ
- Avalanche Energy Rating (Eas) :
- 240 mJ
- Terminal Position :
- Single
- FET Type :
- N-Channel
- Series :
- PowerTrench®
- RoHS Status :
- ROHS3 Compliant
- DS Breakdown Voltage-Min :
- 30V
- Drain-source On Resistance-Max :
- 0.0062Ohm
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 31nC @ 5V
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Current - Continuous Drain (Id) @ 25°C :
- 75A Ta
- Drain Current-Max (Abs) (ID) :
- 75A
- Datasheets
- FDD6682

N-Channel Tape & Reel (TR) 6.2m Ω @ 17A, 10V ±20V 2.4pF @ 15V 31nC @ 5V 30V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD6682 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 240 mJ.A device's maximal input capacitance is 2.4pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 75A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 100A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 30V.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
FDD6682 Features
the avalanche energy rating (Eas) is 240 mJ
based on its rated peak drain current 100A.
a 30V drain to source voltage (Vdss)
FDD6682 Applications
There are a lot of Rochester Electronics, LLC
FDD6682 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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