FDD6680A
- Mfr.Part #
- FDD6680A
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 14A/56A DPAK
- Stock
- 30,715
- In Stock :
- 30,715
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 2
- Base Part Number :
- FDD6680
- Terminal Form :
- Gull wing
- Length :
- 6.73mm
- Width :
- 6.22mm
- Dual Supply Voltage :
- 30V
- Rise Time :
- 6ns
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 20V
- Turn On Delay Time :
- 10 ns
- Weight :
- 260.37mg
- Input Capacitance (Ciss) (Max) @ Vds :
- 1200pF @ 15V
- Nominal Vgs :
- 1.4 V
- Mount :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G2
- Transistor Element Material :
- SILICON
- Threshold Voltage :
- 1.4V
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 10.5m Ω @ 12.5A, 10V
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- Continuous Drain Current (ID) :
- 55A
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Termination :
- SMD/SMT
- Current Rating :
- 55A
- Voltage - Rated DC :
- 30V
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- PowerTrench®, SyncFET™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Published :
- 2004
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 10V
- Turn-Off Delay Time :
- 28 ns
- Drain to Source Breakdown Voltage :
- 30V
- Number of Pins :
- 3
- Fall Time (Typ) :
- 12 ns
- ECCN Code :
- EAR99
- Avalanche Energy Rating (Eas) :
- 205 mJ
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 55A Ta
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Height :
- 2.39mm
- Power Dissipation-Max :
- 60W Ta
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 16 hours ago)
- Radiation Hardening :
- No
- Power Dissipation :
- 60mW
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Factory Lead Time :
- 10 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Datasheets
- FDD6680A

N-Channel Tape & Reel (TR) 10.5m Ω @ 12.5A, 10V ±20V 1200pF @ 15V 29nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD6680AS Description
The FDD6680AS is a SyncFET? N-channel MOSFET produced using the PowerTrench? process. It is designed to replace a single MOSFET and Schottky diode in synchronous DC-to-DC power supplies. This 30V MOSFET FDD6680AS is designed to maximize power conversion efficiency, providing a low RDS (ON) and low gate charge. The FDD6680AS includes an integrated Schottky diode using monolithic SyncFET technology. The performance is as the low-side switch in a synchronous rectifier is indistinguishable from the performance in parallel with a Schottky diode.
FDD6680AS Features
-
55A, 30V
-
RDS(ON) = 10.5 mΩ @ VGS = 10 V
-
RDS(ON) = 13.0 mΩ @ VGS = 4.5 V
-
Includes SyncFET? Schottky body diode
-
Low gate charge (21nC typical)
-
High-performance trench technology for extremely low RDS(ON)
-
High power and current handling capability
FDD6680AS Applications
-
Cellular phones
-
Laptop computers
-
Photovoltaic systems
-
Wind turbines
-
Shunt voltage regulator and the series voltage regulator
-
Low side notebook
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