FDD6680A

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Mfr.Part #
FDD6680A
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 30V 14A/56A DPAK
Stock
26,795
In Stock :
26,795

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Element Configuration :
Single
Turn On Delay Time :
10 ns
Lifecycle Status :
ACTIVE (Last Updated: 16 hours ago)
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
JESD-609 Code :
e3
Current Rating :
55A
Power Dissipation-Max :
60W Ta
FET Type :
N-Channel
Number of Pins :
3
Transistor Element Material :
SILICON
Mount :
Surface Mount
Rise Time :
6ns
Drain to Source Breakdown Voltage :
30V
Turn-Off Delay Time :
28 ns
Voltage - Rated DC :
30V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs :
29nC @ 10V
Number of Terminations :
2
Pbfree Code :
yes
Packaging :
Tape and Reel (TR)
Avalanche Energy Rating (Eas) :
205 mJ
Published :
2004
Operating Temperature :
-55°C~150°C TJ
Continuous Drain Current (ID) :
55A
Factory Lead Time :
10 Weeks
Case Connection :
DRAIN
Gate to Source Voltage (Vgs) :
20V
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Width :
6.22mm
Mounting Type :
Surface Mount
REACH SVHC :
No SVHC
Input Capacitance (Ciss) (Max) @ Vds :
1200pF @ 15V
JESD-30 Code :
R-PSSO-G2
Vgs (Max) :
±20V
Length :
6.73mm
Lead Free :
Lead Free
ECCN Code :
EAR99
Termination :
SMD/SMT
Series :
PowerTrench®, SyncFET™
Number of Elements :
1
Nominal Vgs :
1.4 V
RoHS Status :
ROHS3 Compliant
Vgs(th) (Max) @ Id :
3V @ 1mA
Fall Time (Typ) :
12 ns
Height :
2.39mm
Transistor Application :
SWITCHING
Terminal Form :
Gull wing
Weight :
260.37mg
Current - Continuous Drain (Id) @ 25°C :
55A Ta
Base Part Number :
FDD6680
Dual Supply Voltage :
30V
Threshold Voltage :
1.4V
Rds On (Max) @ Id, Vgs :
10.5m Ω @ 12.5A, 10V
Power Dissipation :
60mW
Operating Mode :
ENHANCEMENT MODE
Terminal Finish :
Tin (Sn)
Radiation Hardening :
No
Introducing Transistors - FETs, MOSFETs - Single onsemi FDD6680A from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:2, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, Base Part Number:FDD6680, FDD6680A pinout, FDD6680A datasheet PDF, FDD6680A amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDD6680A ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDD6680A


N-Channel Tape & Reel (TR) 10.5m Ω @ 12.5A, 10V ±20V 1200pF @ 15V 29nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

FDD6680AS Description


The FDD6680AS is a SyncFET? N-channel MOSFET produced using the PowerTrench? process. It is designed to replace a single MOSFET and Schottky diode in synchronous DC-to-DC power supplies. This 30V MOSFET FDD6680AS is designed to maximize power conversion efficiency, providing a low RDS (ON) and low gate charge. The FDD6680AS includes an integrated Schottky diode using monolithic SyncFET technology. The performance is as the low-side switch in a synchronous rectifier is indistinguishable from the performance in parallel with a Schottky diode.



FDD6680AS Features


  • 55A, 30V

  • RDS(ON) = 10.5 mΩ @ VGS = 10 V

  • RDS(ON) = 13.0 mΩ @ VGS = 4.5 V

  • Includes SyncFET? Schottky body diode

  • Low gate charge (21nC typical)

  • High-performance trench technology for extremely low RDS(ON)

  • High power and current handling capability



FDD6680AS Applications


  • Cellular phones 

  • Laptop computers

  • Photovoltaic systems 

  • Wind turbines

  • Shunt voltage regulator and the series voltage regulator

  • Low side notebook


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