FDD6637
- Mfr.Part #
- FDD6637
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 35V 13A/55A DPAK
- Stock
- 8,961
- In Stock :
- 8,961
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Number of Channels :
- 1
- Drain to Source Breakdown Voltage :
- -35V
- Factory Lead Time :
- 10 Weeks
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±25V
- Terminal Form :
- Gull wing
- Fall Time (Typ) :
- 36 ns
- Transistor Application :
- SWITCHING
- Series :
- PowerTrench®
- Published :
- 2017
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Drain Current-Max (Abs) (ID) :
- 55A
- Turn-Off Delay Time :
- 62 ns
- Radiation Hardening :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 13A Ta 55A Tc
- Length :
- 6.73mm
- Rise Time :
- 10ns
- JESD-609 Code :
- e3
- Max Junction Temperature (Tj) :
- 150°C
- Nominal Vgs :
- -1.6 V
- Height :
- 2.517mm
- Mount :
- Surface Mount
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Continuous Drain Current (ID) :
- -13A
- Number of Pins :
- 3
- Power Dissipation :
- 1.3W
- Case Connection :
- DRAIN
- Terminal Finish :
- Tin (Sn)
- Turn On Delay Time :
- 18 ns
- Weight :
- 260.37mg
- Lifecycle Status :
- ACTIVE (Last Updated: 15 hours ago)
- Element Configuration :
- Single
- Threshold Voltage :
- -1.6V
- Number of Terminations :
- 2
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tape and Reel (TR)
- Power Dissipation-Max :
- 3.1W Ta 57W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 2370pF @ 20V
- Resistance :
- 11.6mOhm
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- JESD-30 Code :
- R-PSSO-G2
- REACH SVHC :
- No SVHC
- Gate to Source Voltage (Vgs) :
- 25V
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 11.6m Ω @ 14A, 10V
- FET Type :
- P-Channel
- Drain to Source Voltage (Vdss) :
- 35V
- Width :
- 6.22mm
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs :
- 63nC @ 10V
- Datasheets
- FDD6637

P-Channel Tape & Reel (TR) 11.6m Ω @ 14A, 10V ±25V 2370pF @ 20V 63nC @ 10V 35V TO-252-3, DPak (2 Leads + Tab), SC-63
Description
The FDD6637 is a PowerTrench? MOSFET that operates at -35V and has been specifically designed to reduce on-state resistance and preserve low gate charge for enhanced switching performance. The most recent medium voltage power MOSFET is an optimized power switch that combines a soft reverse recovery body diode, a small gate charge (QG), and a tiny reverse recovery charge (Qrr) to contribute to quick switching for synchronous rectification in AC/DC power supply. Charge balance is provided by the shielded-gate construction it uses. The FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower thanks to the use of this cutting-edge technology than that of the previous generation. Because it may reduce the unfavorable voltage spikes in synchronous rectification, the soft body diode performance of the new PowerTrench? MOSFET allows for the elimination of snubber circuits or the replacement of higher voltage rating - MOSFET requires circuits. This product is all-purpose and appropriate for a wide range of uses.
Features
-
High performance trench technology for extremely low RDS (on)
-
–55 A, –35 V RDS(ON) = 11.6 mW @ VGS = –10 V
RDS(ON) = 18 mW @ VGS = –4.5 V
-
RoHS Compliant
-
Withstand voltage
-
Low On-Resistance
-
High current
Applications
-
Inverter
-
Power supplies
-
Automotive electronics
-
As switching devices in electronic control units
-
As power converters in modern electric vehicles
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