FDD18N20LZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-252AA

Number of Elements :

1

Transistor Element Material :

SILICON

Height :

2.39mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

135 ns

Series :

UniFET™

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Fall Time (Typ) :

50 ns

Rds On (Max) @ Id, Vgs :

125m Ω @ 8A, 10V

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G2

Contact Plating :

Tin

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Terminal Form :

Gull wing

Pbfree Code :

yes

Rise Time :

20ns

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Continuous Drain Current (ID) :

16A

Element Configuration :

Single

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Number of Pins :

3

Power Dissipation-Max :

89W Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Published :

2013

Factory Lead Time :

4 Weeks

Turn On Delay Time :

15 ns

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Resistance :

125mOhm

Mount :

Surface Mount

ECCN Code :

EAR99

Weight :

260.37mg

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Pulsed Drain Current-Max (IDM) :

64A

Operating Temperature :

-55°C~150°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Power Dissipation :

89W

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Width :

6.22mm

Drain to Source Breakdown Voltage :

200V

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

1575pF @ 25V

Length :

6.73mm