FDD18N20LZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

64A

Turn-Off Delay Time :

135 ns

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

89W Tc

Width :

6.22mm

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

89W

Number of Terminations :

2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Contact Plating :

Tin

Transistor Element Material :

SILICON

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Number of Elements :

1

Transistor Application :

SWITCHING

Length :

6.73mm

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Height :

2.39mm

JESD-609 Code :

e3

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

200V

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

125m Ω @ 8A, 10V

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-252AA

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Continuous Drain Current (ID) :

16A

Series :

UniFET™

Weight :

260.37mg

Pbfree Code :

yes

Published :

2013

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Terminal Form :

Gull wing

Fall Time (Typ) :

50 ns

Number of Pins :

3

Factory Lead Time :

4 Weeks

Radiation Hardening :

No

Resistance :

125mOhm

Turn On Delay Time :

15 ns

Rise Time :

20ns

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

1575pF @ 25V