FDD120AN15A0

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

JEDEC-95 Code :

TO-252AA

Factory Lead Time :

8 Weeks

Drain to Source Breakdown Voltage :

150V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Continuous Drain Current (ID) :

14A

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

770pF @ 25V

Power Dissipation :

65W

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Element Configuration :

Single

ECCN Code :

EAR99

Threshold Voltage :

4V

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Length :

6.73mm

Number of Terminations :

2

Current Rating :

14A

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Power Dissipation-Max :

65W Tc

Turn-Off Delay Time :

30 ns

Width :

6.22mm

Number of Pins :

3

Resistance :

120mOhm

Turn On Delay Time :

6 ns

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

2.8A

Radiation Hardening :

No

Series :

PowerTrench®

Lead Free :

Lead Free

Published :

2002

Transistor Application :

SWITCHING

Weight :

260.37mg

Number of Elements :

1

Fall Time (Typ) :

19 ns

Gate Charge (Qg) (Max) @ Vgs :

14.5nC @ 10V

Rds On (Max) @ Id, Vgs :

120m Ω @ 4A, 10V

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Contact Plating :

Tin

Height :

2.39mm

Rise Time :

16ns

Pbfree Code :

yes

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

2.8A Ta 14A Tc

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

150V

REACH SVHC :

No SVHC