FDD13AN06A0-F085

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

60V

Current - Continuous Drain (Id) @ 25°C :

9.9A Ta 50A Tc

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-252AA

Number of Terminations :

2

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Base Part Number :

FDD13AN06

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.0135Ohm

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Transistor Application :

SWITCHING

Power Dissipation-Max :

115W Tc

Avalanche Energy Rating (Eas) :

56 mJ

Drain to Source Voltage (Vdss) :

60V

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

4V @ 250µA

Pbfree Code :

yes

Mounting Type :

Surface Mount

Surface Mount :

yes

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Series :

Automotive, AEC-Q101, PowerTrench®

Rds On (Max) @ Id, Vgs :

13.5m Ω @ 50A, 10V

Terminal Form :

Gull wing

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Terminal Position :

Single

Reach Compliance Code :

not_compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Factory Lead Time :

4 Weeks

Drain Current-Max (Abs) (ID) :

9.9A