FDD14AN06LA0
- Mfr.Part #
- FDD14AN06LA0
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 9.5A/50A TO252AA
- Stock
- 12,679
- In Stock :
- 12,679
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 4
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Series :
- PowerTrench®
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 5V
- Drain-source On Resistance-Max :
- 0.015Ohm
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Terminal Finish :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 55 mJ
- Surface Mount :
- yes
- Drain Current-Max (Abs) (ID) :
- 9.5A
- Terminal Position :
- Single
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 9.5A Ta 50A Tc
- RoHS Status :
- ROHS3 Compliant
- Qualification Status :
- COMMERCIAL
- FET Type :
- N-Channel
- Packaging :
- Tape and Reel (TR)
- Vgs (Max) :
- ±20V
- Pbfree Code :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.81pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 11.6m Ω @ 50A, 10V
- Number of Terminations :
- 2
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- JEDEC-95 Code :
- TO-252AA
- Case Connection :
- DRAIN
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max :
- 125W Tc
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 60V
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G2
- Operating Temperature :
- -55°C~175°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- DS Breakdown Voltage-Min :
- 60V
- Datasheets
- FDD14AN06LA0

N-Channel Tape & Reel (TR) 11.6m Ω @ 50A, 10V ±20V 2.81pF @ 25V 32nC @ 5V 60V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD14AN06LA0 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 55 mJ.A device's maximum input capacitance is 2.81pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 9.5A, and it is the maximum continuous current the device can conduct.For normal operation, maintain the DS breakdown voltage above 60V.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (5V 10V) to reduce its overall power consumption.
FDD14AN06LA0 Features
the avalanche energy rating (Eas) is 55 mJ
a 60V drain to source voltage (Vdss)
FDD14AN06LA0 Applications
There are a lot of Rochester Electronics, LLC
FDD14AN06LA0 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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