FDD14AN06LA0-F085

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

11.6m Ω @ 50A, 10V

JESD-30 Code :

R-PSSO-G2

Turn-Off Delay Time :

27 ns

Continuous Drain Current (ID) :

50A

JEDEC-95 Code :

TO-252AA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Fall Time (Typ) :

27 ns

Packaging :

Tape and Reel (TR)

Power Dissipation :

125W

Vgs(th) (Max) @ Id :

3V @ 250µA

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 5V

Terminal Finish :

Tin (Sn)

Mount :

Surface Mount

Avalanche Energy Rating (Eas) :

55 mJ

Case Connection :

DRAIN

Turn On Delay Time :

14 ns

Lifecycle Status :

ACTIVE (Last Updated: 17 hours ago)

Factory Lead Time :

29 Weeks

Pbfree Code :

yes

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Weight :

260.37mg

Series :

Automotive, AEC-Q101, PowerTrench®

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Current - Continuous Drain (Id) @ 25°C :

9.5A Ta 50A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

11.6mOhm

Input Capacitance (Ciss) (Max) @ Vds :

2810pF @ 25V

Element Configuration :

Single

Mounting Type :

Surface Mount

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

9.5A

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

JESD-609 Code :

e3

Rise Time :

132ns

Drain to Source Breakdown Voltage :

60V

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Vgs (Max) :

±20V

Number of Terminations :

2

Power Dissipation-Max :

125W Tc