FDD10N20LZTM

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Mfr.Part #
FDD10N20LZTM
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 200V 7.6A DPAK
Stock
37
In Stock :
37

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Breakdown Voltage :
200V
Input Capacitance (Ciss) (Max) @ Vds :
585pF @ 25V
Number of Elements :
1
Terminal Finish :
Tin (Sn)
Current - Continuous Drain (Id) @ 25°C :
7.6A Tc
Pbfree Code :
yes
Operating Mode :
ENHANCEMENT MODE
JESD-30 Code :
R-PSSO-G2
Rds On (Max) @ Id, Vgs :
360m Ω @ 3.8A, 10V
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Mount :
Surface Mount
Weight :
260.37mg
Element Configuration :
Single
Case Connection :
DRAIN
Height :
2.39mm
Power Dissipation :
56W
Factory Lead Time :
11 Weeks
ECCN Code :
EAR99
FET Type :
N-Channel
JESD-609 Code :
e3
Mounting Type :
Surface Mount
Radiation Hardening :
No
Gate to Source Voltage (Vgs) :
20V
Series :
UniFET™
Length :
6.73mm
RoHS Status :
ROHS3 Compliant
Gate Charge (Qg) (Max) @ Vgs :
16nC @ 10V
Rise Time :
15ns
Terminal Form :
Gull wing
Width :
6.22mm
JEDEC-95 Code :
TO-252AA
Number of Pins :
3
Vgs (Max) :
±20V
Continuous Drain Current (ID) :
7.6A
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material :
SILICON
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
Fall Time (Typ) :
25 ns
Power Dissipation-Max :
83W Tc
Turn-Off Delay Time :
55 ns
Turn On Delay Time :
10 ns
Transistor Application :
SWITCHING
Packaging :
Tape and Reel (TR)
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Operating Temperature :
-55°C~150°C TJ
Number of Terminations :
2
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
FDD10N20LZTM
Introducing Transistors - FETs, MOSFETs - Single onsemi FDD10N20LZTM from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:3, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, FDD10N20LZTM pinout, FDD10N20LZTM datasheet PDF, FDD10N20LZTM amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDD10N20LZTM ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDD10N20LZTM


N-Channel Tape & Reel (TR) 360m Ω @ 3.8A, 10V ±20V 585pF @ 25V 16nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

FDD10N20LZTM Description

UniFETTM MOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts.



FDD10N20LZTM Features

RDS(on) = 300m? ( Typ.)@ VGS = 10V, ID = 3.8A

Low gate charge ( Typ. 12nC)

Low Crss ( Typ. 11pF)

100% avalanche tested

Improved dv/dt capability

ESD improved capability

RoHS compliant



FDD10N20LZTM Applications

This product is general usage and suitable for many different applications.



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