FDD10N20LZTM

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Mfr.Part #
FDD10N20LZTM
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 200V 7.6A DPAK
Stock
37
In Stock :
37

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Turn On Delay Time :
10 ns
Pbfree Code :
yes
JESD-609 Code :
e3
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
Number of Elements :
1
Transistor Element Material :
SILICON
Mounting Type :
Surface Mount
Fall Time (Typ) :
25 ns
Power Dissipation-Max :
83W Tc
Continuous Drain Current (ID) :
7.6A
Length :
6.73mm
Power Dissipation :
56W
Input Capacitance (Ciss) (Max) @ Vds :
585pF @ 25V
JESD-30 Code :
R-PSSO-G2
Number of Pins :
3
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Rds On (Max) @ Id, Vgs :
360m Ω @ 3.8A, 10V
Factory Lead Time :
11 Weeks
ECCN Code :
EAR99
JEDEC-95 Code :
TO-252AA
Height :
2.39mm
RoHS Status :
ROHS3 Compliant
Rise Time :
15ns
Width :
6.22mm
Turn-Off Delay Time :
55 ns
Packaging :
Tape and Reel (TR)
Series :
UniFET™
Case Connection :
DRAIN
Element Configuration :
Single
Vgs (Max) :
±20V
Weight :
260.37mg
Terminal Finish :
Tin (Sn)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Application :
SWITCHING
Current - Continuous Drain (Id) @ 25°C :
7.6A Tc
Radiation Hardening :
No
FET Type :
N-Channel
Mount :
Surface Mount
Number of Terminations :
2
Operating Temperature :
-55°C~150°C TJ
Gate to Source Voltage (Vgs) :
20V
Gate Charge (Qg) (Max) @ Vgs :
16nC @ 10V
Drain to Source Breakdown Voltage :
200V
Operating Mode :
ENHANCEMENT MODE
Terminal Form :
Gull wing
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Datasheets
FDD10N20LZTM
Introducing Transistors - FETs, MOSFETs - Single onsemi FDD10N20LZTM from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:3, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Terminations:2, Operating Temperature:-55°C~150°C TJ, FDD10N20LZTM pinout, FDD10N20LZTM datasheet PDF, FDD10N20LZTM amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDD10N20LZTM ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDD10N20LZTM


N-Channel Tape & Reel (TR) 360m Ω @ 3.8A, 10V ±20V 585pF @ 25V 16nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

FDD10N20LZTM Description

UniFETTM MOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts.



FDD10N20LZTM Features

RDS(on) = 300m? ( Typ.)@ VGS = 10V, ID = 3.8A

Low gate charge ( Typ. 12nC)

Low Crss ( Typ. 11pF)

100% avalanche tested

Improved dv/dt capability

ESD improved capability

RoHS compliant



FDD10N20LZTM Applications

This product is general usage and suitable for many different applications.



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