FDD10N20LZTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

25 ns

Transistor Application :

SWITCHING

Length :

6.73mm

Weight :

260.37mg

Rds On (Max) @ Id, Vgs :

360m Ω @ 3.8A, 10V

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Pbfree Code :

yes

Continuous Drain Current (ID) :

7.6A

Number of Terminations :

2

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Rise Time :

15ns

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

7.6A Tc

Power Dissipation :

56W

Series :

UniFET™

JEDEC-95 Code :

TO-252AA

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

JESD-30 Code :

R-PSSO-G2

Factory Lead Time :

11 Weeks

Height :

2.39mm

Mount :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Power Dissipation-Max :

83W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

200V

Turn On Delay Time :

10 ns

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

585pF @ 25V

Element Configuration :

Single

Width :

6.22mm

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Number of Pins :

3

Radiation Hardening :

No

Turn-Off Delay Time :

55 ns