FDD10N20LZTM

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Mfr.Part #
FDD10N20LZTM
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 200V 7.6A DPAK
Stock
37
In Stock :
37

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Series :
UniFET™
Number of Elements :
1
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Power Dissipation-Max :
83W Tc
Continuous Drain Current (ID) :
7.6A
Case Connection :
DRAIN
Terminal Form :
Gull wing
Input Capacitance (Ciss) (Max) @ Vds :
585pF @ 25V
ECCN Code :
EAR99
Turn-Off Delay Time :
55 ns
Gate to Source Voltage (Vgs) :
20V
FET Type :
N-Channel
Mount :
Surface Mount
Element Configuration :
Single
Current - Continuous Drain (Id) @ 25°C :
7.6A Tc
JESD-609 Code :
e3
Vgs (Max) :
±20V
Length :
6.73mm
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Terminal Finish :
Tin (Sn)
Mounting Type :
Surface Mount
Operating Temperature :
-55°C~150°C TJ
Number of Terminations :
2
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
JESD-30 Code :
R-PSSO-G2
Factory Lead Time :
11 Weeks
Radiation Hardening :
No
Height :
2.39mm
Gate Charge (Qg) (Max) @ Vgs :
16nC @ 10V
Transistor Element Material :
SILICON
Weight :
260.37mg
Number of Pins :
3
Rise Time :
15ns
RoHS Status :
ROHS3 Compliant
Drain to Source Breakdown Voltage :
200V
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
Width :
6.22mm
Operating Mode :
ENHANCEMENT MODE
Transistor Application :
SWITCHING
Rds On (Max) @ Id, Vgs :
360m Ω @ 3.8A, 10V
Pbfree Code :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tape and Reel (TR)
Power Dissipation :
56W
Turn On Delay Time :
10 ns
Fall Time (Typ) :
25 ns
JEDEC-95 Code :
TO-252AA
Datasheets
FDD10N20LZTM
Introducing Transistors - FETs, MOSFETs - Single onsemi FDD10N20LZTM from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Pins:3, FDD10N20LZTM pinout, FDD10N20LZTM datasheet PDF, FDD10N20LZTM amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDD10N20LZTM ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDD10N20LZTM


N-Channel Tape & Reel (TR) 360m Ω @ 3.8A, 10V ±20V 585pF @ 25V 16nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

FDD10N20LZTM Description

UniFETTM MOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts.



FDD10N20LZTM Features

RDS(on) = 300m? ( Typ.)@ VGS = 10V, ID = 3.8A

Low gate charge ( Typ. 12nC)

Low Crss ( Typ. 11pF)

100% avalanche tested

Improved dv/dt capability

ESD improved capability

RoHS compliant



FDD10N20LZTM Applications

This product is general usage and suitable for many different applications.



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