FDD13AN06A0

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Weight :

260.37mg

FET Type :

N-Channel

Contact Plating :

Tin

Gate to Source Voltage (Vgs) :

20V

Width :

6.22mm

Series :

PowerTrench®

Dual Supply Voltage :

60V

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 25V

Termination :

SMD/SMT

JEDEC-95 Code :

TO-252AA

Base Part Number :

FDD13AN06

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

56 mJ

Operating Temperature :

-55°C~175°C TJ

Nominal Vgs :

4 V

Mount :

Surface Mount

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

9.9A Ta 50A Tc

Turn-Off Delay Time :

26 ns

Mounting Type :

Surface Mount

Turn On Delay Time :

9 ns

Fall Time (Typ) :

25 ns

Terminal Form :

Gull wing

Factory Lead Time :

8 Weeks

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Case Connection :

DRAIN

Continuous Drain Current (ID) :

50A

Length :

6.73mm

Lead Free :

Lead Free

Threshold Voltage :

4V

Rds On (Max) @ Id, Vgs :

13.5m Ω @ 50A, 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Pins :

3

Radiation Hardening :

No

Voltage - Rated DC :

60V

Current Rating :

9.9A

Power Dissipation-Max :

115W Tc

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Transistor Application :

SWITCHING

Height :

2.39mm

Published :

2003

Drain to Source Breakdown Voltage :

60V

Rise Time :

77ns

Number of Terminations :

2

Power Dissipation :

115W

JESD-30 Code :

R-PSSO-G2

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)