FDD13AN06A0
- Mfr.Part #
- FDD13AN06A0
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 9.9A/50A DPAK
- Stock
- 14,492
- In Stock :
- 14,492
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Contact Plating :
- Tin
- Length :
- 6.73mm
- Operating Temperature :
- -55°C~175°C TJ
- Published :
- 2003
- Height :
- 2.39mm
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Form :
- Gull wing
- Turn On Delay Time :
- 9 ns
- Transistor Element Material :
- SILICON
- Dual Supply Voltage :
- 60V
- Pbfree Code :
- yes
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Packaging :
- Tape and Reel (TR)
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 8 Weeks
- Termination :
- SMD/SMT
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 10V
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Width :
- 6.22mm
- Base Part Number :
- FDD13AN06
- Fall Time (Typ) :
- 25 ns
- FET Type :
- N-Channel
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Power Dissipation :
- 115W
- Rise Time :
- 77ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1350pF @ 25V
- Number of Terminations :
- 2
- JEDEC-95 Code :
- TO-252AA
- Voltage - Rated DC :
- 60V
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 13.5m Ω @ 50A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Threshold Voltage :
- 4V
- Current - Continuous Drain (Id) @ 25°C :
- 9.9A Ta 50A Tc
- Nominal Vgs :
- 4 V
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PSSO-G2
- Case Connection :
- DRAIN
- Continuous Drain Current (ID) :
- 50A
- Weight :
- 260.37mg
- Drain to Source Breakdown Voltage :
- 60V
- Turn-Off Delay Time :
- 26 ns
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 115W Tc
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Series :
- PowerTrench®
- Current Rating :
- 9.9A
- Avalanche Energy Rating (Eas) :
- 56 mJ
- Datasheets
- FDD13AN06A0

N-Channel Tape & Reel (TR) 13.5m Ω @ 50A, 10V ±20V 1350pF @ 25V 29nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDM3622 Description
FDM3622 is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 100V. The operating temperature of FDM3622 is -55°C~150°C TJ and its maximum power dissipation is 2.1W. FDM3622 has 8 pins and it is available in Tape & Reel (TR) packaging way. The Turn On Delay Time of FDM3622 is 11 ns and its Turn-Off Delay Time is 35 ns.
FDM3622 Features
-
RDS(on) = 11.5m? (Typ.) @ VGS = 10V, ID = 50A
-
QG(tot) = 22nC (Typ.) @ VGS = 10V
-
Low Miller Charge
-
Low Qrr Body Diode
-
UIS Capability (Single Pulse and Repetitive Pulse)
-
Qualified to AEC Q101
FDM3622 Applications
-
AC-DC Merchant Power Supply
-
AC-DC Merchant Power Supply - Servers & Workstations
-
AC-DC Merchant Power Supply - Desktop PC
-
Other Data Processing
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