FDD10AN06A0-F085
- Mfr.Part #
- FDD10AN06A0-F085
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 11A TO252AA
- Stock
- 2,651
- In Stock :
- 2,651
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 1840pF @ 25V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 37nC @ 10V
- Turn On Delay Time :
- 8 ns
- Drain Current-Max (Abs) (ID) :
- 50A
- Drain to Source Breakdown Voltage :
- 60V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Terminal Finish :
- Tin (Sn)
- Fall Time (Typ) :
- 32 ns
- Avalanche Energy Rating (Eas) :
- 429 mJ
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Channels :
- 1
- FET Type :
- N-Channel
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 32 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Case Connection :
- DRAIN
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 11A
- JESD-30 Code :
- R-PSSO-G2
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 42 Weeks
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Form :
- Gull wing
- Rds On (Max) @ Id, Vgs :
- 10.5m Ω @ 50A, 10V
- Packaging :
- Tape and Reel (TR)
- Power Dissipation-Max :
- 135W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 135W
- Vgs (Max) :
- ±20V
- Element Configuration :
- Single
- Number of Terminations :
- 2
- JEDEC-95 Code :
- TO-252AA
- Mount :
- Surface Mount
- Reach Compliance Code :
- not_compliant
- Mounting Type :
- Surface Mount
- Weight :
- 260.37mg
- Series :
- Automotive, AEC-Q101, PowerTrench®
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rise Time :
- 79ns
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Current - Continuous Drain (Id) @ 25°C :
- 11A Ta
- JESD-609 Code :
- e3
- Datasheets
- FDD10AN06A0-F085

N-Channel Tape & Reel (TR) 10.5m Ω @ 50A, 10V ±20V 1840pF @ 25V 37nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD10AN06A0-F085 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 429 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1840pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 11A.With a drain-source breakdown voltage of 60V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 60V.50A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 32 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.
FDD10AN06A0-F085 Features
the avalanche energy rating (Eas) is 429 mJ
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 32 ns
FDD10AN06A0-F085 Applications
There are a lot of ON Semiconductor
FDD10AN06A0-F085 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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