FDD16AN08A0

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-609 Code :

e3

Vgs (Max) :

±20V

Case Connection :

DRAIN

Number of Pins :

3

Drain Current-Max (Abs) (ID) :

9A

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

95 mJ

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

75V

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Resistance :

16mOhm

Rise Time :

54ns

Input Capacitance (Ciss) (Max) @ Vds :

1874pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Width :

6.22mm

JEDEC-95 Code :

TO-252AA

Weight :

260.37mg

Published :

2013

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Continuous Drain Current (ID) :

50A

Power Dissipation :

135W

Number of Terminations :

2

Turn-Off Delay Time :

32 ns

FET Type :

N-Channel

Terminal Form :

Gull wing

Voltage - Rated DC :

75V

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Radiation Hardening :

No

Series :

UltraFET™

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Pbfree Code :

yes

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

Turn On Delay Time :

8 ns

Lead Free :

Lead Free

Fall Time (Typ) :

22 ns

Mount :

Surface Mount

Current Rating :

50A

Factory Lead Time :

8 Weeks

Rds On (Max) @ Id, Vgs :

16m Ω @ 50A, 10V

Current - Continuous Drain (Id) @ 25°C :

9A Ta 50A Tc

Length :

6.73mm

Number of Elements :

1

Threshold Voltage :

4V

Contact Plating :

Tin

REACH SVHC :

No SVHC

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Height :

2.39mm

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

135W Tc

Transistor Application :

SWITCHING