FDB28N30TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Drain to Source Breakdown Voltage :

300V

Operating Temperature :

-55°C~150°C TJ

Contact Plating :

Tin

Reach Compliance Code :

not_compliant

REACH SVHC :

No SVHC

Height :

4.83mm

Threshold Voltage :

5V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Length :

10.67mm

Turn-Off Delay Time :

79 ns

Avalanche Energy Rating (Eas) :

588 mJ

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

30V

Width :

11.33mm

Element Configuration :

Single

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

28A Tc

Published :

2007

Number of Pins :

3

Power Dissipation :

250W

Series :

UniFET™

Terminal Form :

Gull wing

Power Dissipation-Max :

250W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Vgs (Max) :

±30V

Lead Free :

Lead Free

ECCN Code :

EAR99

Case Connection :

DRAIN

Fall Time (Typ) :

69 ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Turn On Delay Time :

35 ns

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

129m Ω @ 14A, 10V

Mount :

Surface Mount

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

2250pF @ 25V

Factory Lead Time :

4 Weeks

Weight :

1.31247g

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

135ns

Resistance :

129mOhm

Continuous Drain Current (ID) :

28A

Qualification Status :

Not Qualified