FDB2532

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Series :

PowerTrench®

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Contact Plating :

Tin

Terminal Form :

Gull wing

Resistance :

16mOhm

Power Dissipation :

310W

Turn On Delay Time :

16 ns

Turn-Off Delay Time :

39 ns

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

16m Ω @ 33A, 10V

Factory Lead Time :

8 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Power Dissipation-Max :

310W Tc

Dual Supply Voltage :

150V

Case Connection :

DRAIN

JESD-609 Code :

e3

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Drain to Source Breakdown Voltage :

150V

Current :

79A

Height :

4.83mm

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

8A Ta 79A Tc

Mount :

Surface Mount

Nominal Vgs :

4 V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

107nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

5870pF @ 25V

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Voltage - Rated DC :

150V

Rise Time :

30ns

ECCN Code :

EAR99

Number of Elements :

1

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

79A

FET Type :

N-Channel

Current Rating :

79A

Fall Time (Typ) :

17 ns

Lead Free :

Lead Free

Weight :

4.535924g

Element Configuration :

Single

Width :

11.33mm

Avalanche Energy Rating (Eas) :

400 mJ

Length :

10.67mm

Published :

2002

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

4V

Radiation Hardening :

No

Pbfree Code :

yes

Voltage :

150V

Termination :

SMD/SMT