FDB24AN06LA0
- Mfr.Part #
- FDB24AN06LA0
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 7.8A/40A TO263AB
- Stock
- 6,589
- In Stock :
- 6,589
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Drain Current-Max (Abs) (ID) :
- 7.8A
- Qualification Status :
- COMMERCIAL
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PDSO-G2
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.85pF @ 25V
- Pin Count :
- 4
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 75W Tc
- DS Breakdown Voltage-Min :
- 60V
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Number of Terminations :
- 2
- Terminal Position :
- Dual
- Case Connection :
- DRAIN
- Drain to Source Voltage (Vdss) :
- 60V
- Reach Compliance Code :
- Unknown
- Operating Temperature :
- -55°C~175°C TJ
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Avalanche Energy Rating (Eas) :
- 36 mJ
- Peak Reflow Temperature (Cel) :
- 260
- Series :
- PowerTrench®
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 19m Ω @ 40A, 10V
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 21nC @ 5V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Current - Continuous Drain (Id) @ 25°C :
- 7.8A Ta 40A Tc
- Surface Mount :
- yes
- Terminal Finish :
- MATTE TIN
- Packaging :
- Tape and Reel (TR)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- Drain-source On Resistance-Max :
- 0.019Ohm
- Pbfree Code :
- yes
- Datasheets
- FDB24AN06LA0

N-Channel Tape & Reel (TR) 19m Ω @ 40A, 10V ±20V 1.85pF @ 25V 21nC @ 5V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB24AN06LA0 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 36 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1.85pF @ 25V.A device's drain current is its maximum continuous current, and this device's drain current is 7.8A.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 60V.In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (5V 10V).
FDB24AN06LA0 Features
the avalanche energy rating (Eas) is 36 mJ
a 60V drain to source voltage (Vdss)
FDB24AN06LA0 Applications
There are a lot of Rochester Electronics, LLC
FDB24AN06LA0 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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