FDB2572
- Mfr.Part #
- FDB2572
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 4A/29A TO263AB
- Stock
- 1,268
- In Stock :
- 1,268
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 135W Tc
- Turn On Delay Time :
- 11 ns
- Weight :
- 1.31247g
- Number of Terminations :
- 2
- Factory Lead Time :
- 8 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 34nC @ 10V
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 29A
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 135W
- Series :
- PowerTrench®
- Case Connection :
- DRAIN
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- -55°C~175°C TJ
- Height :
- 4.83mm
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Voltage - Rated DC :
- 150V
- FET Type :
- N-Channel
- JESD-30 Code :
- R-PSSO-G2
- Rise Time :
- 14ns
- Current - Continuous Drain (Id) @ 25°C :
- 4A Ta 29A Tc
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 36 mJ
- Drain to Source Breakdown Voltage :
- 150V
- Length :
- 10.67mm
- Vgs (Max) :
- ±20V
- Mount :
- Surface Mount
- Drain Current-Max (Abs) (ID) :
- 4A
- Resistance :
- 54mOhm
- Terminal Finish :
- Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2002
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 1770pF @ 25V
- Turn-Off Delay Time :
- 31 ns
- Rds On (Max) @ Id, Vgs :
- 54m Ω @ 9A, 10V
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Fall Time (Typ) :
- 14 ns
- Pbfree Code :
- yes
- Current Rating :
- 29A
- Width :
- 11.33mm
- Number of Elements :
- 1
- Datasheets
- FDB2572

N-Channel Tape & Reel (TR) 54m Ω @ 9A, 10V ±20V 1770pF @ 25V 34nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB2572 Description
Only ON Semiconductor produces these DMOS N-channel enhancement mode field effect transistors with high cell density. The on-state resistance of these devices has been reduced while maintaining their strong, trustworthy, and rapid switching performance. They may be used in the majority of applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These parts are most suitable for switching applications, small servo motor control, and other low-voltage, low-current usage, such as power MOSFET gate drivers.
FDB2572 Features
?Vqs = 10V, Qg(tot) = 26nC (Typ.
?Minimal Miller Charge
?Low-Quality Bocy Diode
?UI Capabilities (Single Pulse and Repetitive Pulse)
FDB2572 Applications
?Off-Line UPS and DC/DC converters
?VRMs and Distributed Power Architectures
?Primary Switch for Systems Using 24V and 48V Power
?High-voltage synchronized rectifiers
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