FDB20N50F

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

20A

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Weight :

1.762g

Length :

10.67mm

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

80A

Series :

FRFET®, UniFET™

Width :

9.65mm

Vgs (Max) :

±30V

Transistor Element Material :

SILICON

Pbfree Code :

yes

Turn On Delay Time :

45 ns

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Number of Pins :

3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain to Source Breakdown Voltage :

500V

Turn-Off Delay Time :

100 ns

Fall Time (Typ) :

60 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Height :

4.83mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

JESD-609 Code :

e3

Mount :

Surface Mount

Factory Lead Time :

5 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

260m Ω @ 10A, 10V

Number of Channels :

1

Published :

2013

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

3390pF @ 25V

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Drain-source On Resistance-Max :

0.26Ohm

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Mounting Type :

Surface Mount

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 250μA

Rise Time :

120ns

Gate to Source Voltage (Vgs) :

30V

Power Dissipation :

250W

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

250W Tc