FDB2570

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Surface Mount

Number of Elements :

1

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

22A

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Surface Mount :

yes

Qualification Status :

COMMERCIAL

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

1.911pF @ 75V

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

150V

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

4

DS Breakdown Voltage-Min :

150V

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

375 mJ

Rds On (Max) @ Id, Vgs :

80m Ω @ 11A, 10V

Reach Compliance Code :

Unknown

Pulsed Drain Current-Max (IDM) :

50A

Power Dissipation-Max :

93W Tc

Drain-source On Resistance-Max :

0.08Ohm

Operating Temperature :

-65°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

22A Ta

Terminal Finish :

MATTE TIN

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Number of Terminations :

2

Series :

PowerTrench®

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Terminal Position :

Single