FDB2572

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

36 mJ

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Radiation Hardening :

No

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

150V

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

4A

Current Rating :

29A

JESD-609 Code :

e3

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Rise Time :

14ns

Turn-Off Delay Time :

31 ns

Series :

PowerTrench®

Width :

11.33mm

Terminal Finish :

Tin (Sn)

Turn On Delay Time :

11 ns

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Number of Terminations :

2

Fall Time (Typ) :

14 ns

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

1770pF @ 25V

Power Dissipation-Max :

135W Tc

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Published :

2002

Continuous Drain Current (ID) :

29A

Factory Lead Time :

8 Weeks

Voltage - Rated DC :

150V

Rds On (Max) @ Id, Vgs :

54m Ω @ 9A, 10V

Length :

10.67mm

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

4A Ta 29A Tc

Element Configuration :

Single

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

Height :

4.83mm

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Resistance :

54mOhm

Vgs (Max) :

±20V

Power Dissipation :

135W

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Weight :

1.31247g