FDB2710

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

PowerTrench®

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

101nC @ 10V

Current Rating :

50A

Number of Terminations :

2

Rise Time :

252ns

Dual Supply Voltage :

250V

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

5V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

2

Length :

10.67mm

Threshold Voltage :

4V

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Weight :

1.31247g

Power Dissipation-Max :

260W Tc

Published :

2013

Width :

11.33mm

Rds On (Max) @ Id, Vgs :

42.5m Ω @ 25A, 10V

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

7280pF @ 25V

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

250V

Fall Time (Typ) :

154 ns

Height :

4.83mm

Continuous Drain Current (ID) :

50A

REACH SVHC :

No SVHC

Vgs (Max) :

±30V

Gate to Source Voltage (Vgs) :

30V

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Turn-Off Delay Time :

112 ns

Factory Lead Time :

8 Weeks

Case Connection :

DRAIN

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Number of Elements :

1

Pbfree Code :

yes

FET Type :

N-Channel

Terminal Form :

Gull wing

Terminal Finish :

Tin (Sn)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Nominal Vgs :

4 V

Reach Compliance Code :

not_compliant

Drain to Source Breakdown Voltage :

250V

Power Dissipation :

260W

Termination :

SMD/SMT

Resistance :

42.5mOhm

Turn On Delay Time :

80 ns

Qualification Status :

Not Qualified