FDB2710
- Mfr.Part #
- FDB2710
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 50A D2PAK
- Stock
- 4,319
- In Stock :
- 4,319
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Gull wing
- Dual Supply Voltage :
- 250V
- Case Connection :
- DRAIN
- Number of Terminations :
- 2
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±30V
- Published :
- 2013
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 30V
- Continuous Drain Current (ID) :
- 50A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Width :
- 11.33mm
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Length :
- 10.67mm
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Current Rating :
- 50A
- Transistor Element Material :
- SILICON
- Number of Pins :
- 2
- Operating Mode :
- ENHANCEMENT MODE
- Nominal Vgs :
- 4 V
- Resistance :
- 42.5mOhm
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 42.5m Ω @ 25A, 10V
- Factory Lead Time :
- 8 Weeks
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Terminal Finish :
- Tin (Sn)
- Turn-Off Delay Time :
- 112 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 101nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 80 ns
- Threshold Voltage :
- 4V
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 7280pF @ 25V
- Voltage - Rated DC :
- 250V
- Series :
- PowerTrench®
- Power Dissipation :
- 260W
- Reach Compliance Code :
- not_compliant
- Height :
- 4.83mm
- Weight :
- 1.31247g
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Power Dissipation-Max :
- 260W Tc
- Fall Time (Typ) :
- 154 ns
- Rise Time :
- 252ns
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Termination :
- SMD/SMT
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 250V
- Datasheets
- FDB2710

N-Channel Tape & Reel (TR) 42.5m Ω @ 25A, 10V ±30V 7280pF @ 25V 101nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB2710 N-Channel MOSFET Description
The FDB2710 is an exceptional high-performance N-Channel MOSFET with a 250V rating and 50 A continuous Drain current withstand capability. With a relatively low gate charge and a low on-resistance of only 36.3 m?, it is capable of the most demanding applications.
FDB2710 N-Channel MOSFET Features
-
RDS(on) = 36.3m? (Typ.) @ VGS = 10V, ID = 25A
-
High-performance trench technology for extremely low RDS(on)
-
Low Gate Charge
-
High power and current handing capability
-
NPT design for outstanding reliability
FDB2710 N-Channel MOSFET Applications
-
Consumer appliances
-
Low noise switching
-
High power switching
-
Battery protection
-
High-speed switching
-
HV technology
-
Circuit protections
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