FDB2670

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Drain-source On Resistance-Max :

0.13Ohm

Power Dissipation-Max :

93W Tc

Drain Current-Max (Abs) (ID) :

19A

Number of Terminations :

2

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

40A

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

1.32pF @ 100V

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Drain to Source Voltage (Vdss) :

200V

Terminal Finish :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

130m Ω @ 10A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

375 mJ

Reach Compliance Code :

Unknown

Qualification Status :

COMMERCIAL

DS Breakdown Voltage-Min :

200V

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

19A Ta

Surface Mount :

yes

Transistor Application :

SWITCHING

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-65°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Series :

PowerTrench®

Terminal Form :

Gull wing

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)