FDB2670

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Drain-source On Resistance-Max :

0.13Ohm

Terminal Finish :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

40A

Pin Count :

3

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

130m Ω @ 10A, 10V

Series :

PowerTrench®

DS Breakdown Voltage-Min :

200V

Avalanche Energy Rating (Eas) :

375 mJ

Terminal Position :

Single

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

200V

Current - Continuous Drain (Id) @ 25°C :

19A Ta

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Pbfree Code :

yes

Operating Temperature :

-65°C~175°C TJ

Number of Terminations :

2

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Reach Compliance Code :

Unknown

Packaging :

Tape and Reel (TR)

Qualification Status :

COMMERCIAL

Mounting Type :

Surface Mount

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

19A

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

1.32pF @ 100V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

93W Tc