FDB1D7N10CL7

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Mfr.Part #
FDB1D7N10CL7
Manufacturer
onsemi
Package / Case
TO-263-7, D2Pak (6 Leads + Tab)
Datasheet
Download
Description
MOSFET N-CH 100V 268A D2PAK
Stock
11,414
In Stock :
11,414

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs(th) (Max) @ Id :
4V @ 700μA
Series :
PowerTrench®
Current - Continuous Drain (Id) @ 25°C :
268A Tc
Pbfree Code :
yes
Drive Voltage (Max Rds On,Min Rds On) :
6V 15V
FET Type :
N-Channel
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Avalanche Energy Rating (Eas) :
595 mJ
DS Breakdown Voltage-Min :
100V
JEDEC-95 Code :
TO-263CB
Drain Current-Max (Abs) (ID) :
168A
Number of Terminations :
6
Number of Elements :
1
Surface Mount :
yes
Turn On Time-Max (ton) :
116ns
Terminal Finish :
Tin (Sn)
JESD-30 Code :
R-PSSO-G6
Mounting Type :
Surface Mount
Drain-source On Resistance-Max :
0.00175Ohm
Transistor Element Material :
SILICON
Configuration :
SINGLE WITH BUILT-IN DIODE
Input Capacitance (Ciss) (Max) @ Vds :
11600pF @ 50V
Package / Case :
TO-263-7, D2Pak (6 Leads + Tab)
Drain to Source Voltage (Vdss) :
100V
Pulsed Drain Current-Max (IDM) :
1390A
Vgs (Max) :
±20V
Factory Lead Time :
20 Weeks
Feedback Cap-Max (Crss) :
80 pF
Operating Mode :
ENHANCEMENT MODE
Terminal Position :
Single
JESD-609 Code :
e3
Gate Charge (Qg) (Max) @ Vgs :
163nC @ 10V
Power Dissipation-Max :
250W Tc
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Form :
Gull wing
RoHS Status :
RoHS Compliant
Operating Temperature :
-55°C~175°C TJ
Rds On (Max) @ Id, Vgs :
1.65m Ω @ 100A, 15V
Case Connection :
DRAIN
Turn Off Time-Max (toff) :
194ns
Packaging :
Tape and Reel (TR)
Datasheets
FDB1D7N10CL7
Introducing Transistors - FETs, MOSFETs - Single onsemi FDB1D7N10CL7 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:6, Mounting Type:Surface Mount, Package / Case:TO-263-7, D2Pak (6 Leads + Tab), Operating Temperature:-55°C~175°C TJ, FDB1D7N10CL7 pinout, FDB1D7N10CL7 datasheet PDF, FDB1D7N10CL7 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDB1D7N10CL7 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDB1D7N10CL7


N-Channel Tape & Reel (TR) 1.65m Ω @ 100A, 15V ±20V 11600pF @ 50V 163nC @ 10V 100V TO-263-7, D2Pak (6 Leads + Tab)

Description


The FDB1D7N10CL7 is an N-Channel Shielded Gate POWERTRENCH? MOSFET, 100 V, 268 A, 1.7 mΩ. This N-Channel MOSFET is made utilizing the cutting-edge POWERTRENCH process from ON Semiconductor, which combines Shielded Gate technology. With the best-in-class soft body diode, this method has been refined to reduce on-state resistance while maintaining exceptional switching performance.



Features


  • 50% Lower Qrr than Other MOSFET Suppliers

  • Lowers Switching Noise/EMI

  • MSL1 Robust Package Design

  • 100% UIL Tested

  • Max RDS(on) = 1.75 mΩ at VGS = 10 V, ID = 100 A

  • Max RDS(on) = 1.7 mΩ at VGS = 12 V, ID = 100 A

  • Max RDS(on) = 1.65 mΩ at VGS = 15 V, ID = 100 A

  • Max RDS(on) = 4.4 mΩ at VGS = 6 V, ID = 63 A



Applications


  • Battery Operated Tools

  • Battery Protection

  • Solar Inverters

  • UPS and Energy Inverters

  • Energy Storage

  • Load Switch

  • Industrial Motor Drive

  • Industrial Power Supply

  • Industrial Automation


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