FDB1D7N10CL7
- Mfr.Part #
- FDB1D7N10CL7
- Manufacturer
- onsemi
- Package / Case
- TO-263-7, D2Pak (6 Leads + Tab)
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 268A D2PAK
- Stock
- 11,414
- In Stock :
- 11,414
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4V @ 700μA
- Series :
- PowerTrench®
- Current - Continuous Drain (Id) @ 25°C :
- 268A Tc
- Pbfree Code :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 15V
- FET Type :
- N-Channel
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Avalanche Energy Rating (Eas) :
- 595 mJ
- DS Breakdown Voltage-Min :
- 100V
- JEDEC-95 Code :
- TO-263CB
- Drain Current-Max (Abs) (ID) :
- 168A
- Number of Terminations :
- 6
- Number of Elements :
- 1
- Surface Mount :
- yes
- Turn On Time-Max (ton) :
- 116ns
- Terminal Finish :
- Tin (Sn)
- JESD-30 Code :
- R-PSSO-G6
- Mounting Type :
- Surface Mount
- Drain-source On Resistance-Max :
- 0.00175Ohm
- Transistor Element Material :
- SILICON
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 11600pF @ 50V
- Package / Case :
- TO-263-7, D2Pak (6 Leads + Tab)
- Drain to Source Voltage (Vdss) :
- 100V
- Pulsed Drain Current-Max (IDM) :
- 1390A
- Vgs (Max) :
- ±20V
- Factory Lead Time :
- 20 Weeks
- Feedback Cap-Max (Crss) :
- 80 pF
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- Single
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 163nC @ 10V
- Power Dissipation-Max :
- 250W Tc
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- RoHS Status :
- RoHS Compliant
- Operating Temperature :
- -55°C~175°C TJ
- Rds On (Max) @ Id, Vgs :
- 1.65m Ω @ 100A, 15V
- Case Connection :
- DRAIN
- Turn Off Time-Max (toff) :
- 194ns
- Packaging :
- Tape and Reel (TR)
- Datasheets
- FDB1D7N10CL7

N-Channel Tape & Reel (TR) 1.65m Ω @ 100A, 15V ±20V 11600pF @ 50V 163nC @ 10V 100V TO-263-7, D2Pak (6 Leads + Tab)
Description
The FDB1D7N10CL7 is an N-Channel Shielded Gate POWERTRENCH? MOSFET, 100 V, 268 A, 1.7 mΩ. This N-Channel MOSFET is made utilizing the cutting-edge POWERTRENCH process from ON Semiconductor, which combines Shielded Gate technology. With the best-in-class soft body diode, this method has been refined to reduce on-state resistance while maintaining exceptional switching performance.
Features
-
50% Lower Qrr than Other MOSFET Suppliers
-
Lowers Switching Noise/EMI
-
MSL1 Robust Package Design
-
100% UIL Tested
-
Max RDS(on) = 1.75 mΩ at VGS = 10 V, ID = 100 A
-
Max RDS(on) = 1.7 mΩ at VGS = 12 V, ID = 100 A
-
Max RDS(on) = 1.65 mΩ at VGS = 15 V, ID = 100 A
-
Max RDS(on) = 4.4 mΩ at VGS = 6 V, ID = 63 A
Applications
-
Battery Operated Tools
-
Battery Protection
-
Solar Inverters
-
UPS and Energy Inverters
-
Energy Storage
-
Load Switch
-
Industrial Motor Drive
-
Industrial Power Supply
-
Industrial Automation
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