FDB15N50

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

1850pF @ 25V

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

380m Ω @ 7.5A, 10V

Nominal Vgs :

3.4 V

Threshold Voltage :

3.4V

Number of Terminations :

2

Turn On Delay Time :

9 ns

Transistor Element Material :

SILICON

Length :

10.67mm

Contact Plating :

Tin

Number of Pins :

3

Mount :

Surface Mount

Width :

11.33mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

5 ns

Continuous Drain Current (ID) :

15A

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Application :

SWITCHING

FET Type :

N-Channel

ECCN Code :

EAR99

Vgs (Max) :

±30V

Published :

2003

Gate to Source Voltage (Vgs) :

30V

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

760 mJ

Factory Lead Time :

10 Weeks

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

JESD-609 Code :

e3

Turn-Off Delay Time :

26 ns

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

60A

Pbfree Code :

yes

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Resistance :

380mOhm

Mounting Type :

Surface Mount

Current Rating :

15A

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Weight :

1.31247g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

500V

Drain to Source Breakdown Voltage :

500V

Element Configuration :

Single

Case Connection :

DRAIN

Power Dissipation :

300W

Power Dissipation-Max :

300W Tc

Height :

4.83mm

Rise Time :

5.4ns

Radiation Hardening :

No

Terminal Form :

Gull wing

Number of Elements :

1