FDB15N50
- Mfr.Part #
- FDB15N50
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 15A D2PAK
- Stock
- 829
- In Stock :
- 829
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 11.33mm
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 2
- Fall Time (Typ) :
- 5 ns
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Avalanche Energy Rating (Eas) :
- 760 mJ
- Operating Temperature :
- -55°C~175°C TJ
- Nominal Vgs :
- 3.4 V
- JESD-30 Code :
- R-PSSO-G2
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Rds On (Max) @ Id, Vgs :
- 380m Ω @ 7.5A, 10V
- Power Dissipation-Max :
- 300W Tc
- Transistor Element Material :
- SILICON
- Weight :
- 1.31247g
- Resistance :
- 380mOhm
- Factory Lead Time :
- 10 Weeks
- Current Rating :
- 15A
- Gate Charge (Qg) (Max) @ Vgs :
- 41nC @ 10V
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Height :
- 4.83mm
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Threshold Voltage :
- 3.4V
- Length :
- 10.67mm
- Case Connection :
- DRAIN
- Pulsed Drain Current-Max (IDM) :
- 60A
- Continuous Drain Current (ID) :
- 15A
- Pbfree Code :
- yes
- Rise Time :
- 5.4ns
- JESD-609 Code :
- e3
- Gate to Source Voltage (Vgs) :
- 30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Contact Plating :
- Tin
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- Turn On Delay Time :
- 9 ns
- Voltage - Rated DC :
- 500V
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 300W
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Drain to Source Breakdown Voltage :
- 500V
- Published :
- 2003
- Turn-Off Delay Time :
- 26 ns
- Packaging :
- Tape and Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1850pF @ 25V
- Vgs (Max) :
- ±30V
- Datasheets
- FDB15N50
FDB15N50 Documents

N-Channel Tape & Reel (TR) 380m Ω @ 7.5A, 10V ±30V 1850pF @ 25V 41nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB15N50 Description
UniFETTM:MOSFET is a high voltage MOSFET series based on flat stripe and DMOS technology. The MOSFET is designed to reduce on-resistance and provide better switching performance and higher avalanche energy intensity. The device family is suitable for switching power supply converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX and electronic lamp ballasts.
FDB15N50 Features
Low gate charge Qg results in simple drive requirement ( Typ. 33nC)
Improved Gate, avalanche and high reapplied dv/dt ruggedness
Reduced RDS(on) ( 330m? ( Typ.)@ VGS = 10V, ID = 7.5A)
Reduced Miller capacitance and low Input capacitance ( Typ. Crss = 16pF)
Improved switching speed with low EMI
175oC rated junction temperature
FDB15N50 Applications
This product is general usage and suitable for many different applications.
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