DTB123YUT106

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

HTS Code :

8541.21.00.75

Time@Peak Reflow Temperature-Max (s) :

10

Resistor - Base (R1) :

2.2 k Ω

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Number of Terminations :

3

Pin Count :

3

JESD-609 Code :

e1

Collector Emitter Breakdown Voltage :

50V

RoHS Status :

ROHS3 Compliant

Max Breakdown Voltage :

50V

Transistor Type :

PNP - Pre-Biased

Peak Reflow Temperature (Cel) :

260

Max Operating Temperature :

150°C

hFE Min :

56

Transition Frequency :

200MHz

Resistor - Emitter Base (R2) :

10 k Ω

Package / Case :

SC-70, SOT-323

Current - Collector Cutoff (Max) :

500nA

Pbfree Code :

yes

Mount :

Surface Mount

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

300mV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity :

PNP

Number of Pins :

3

ECCN Code :

EAR99

Radiation Hardening :

No

Lead Free :

Lead Free

Published :

2009

Terminal Position :

Dual

Min Operating Temperature :

-55°C

Frequency - Transition :

200MHz

Mounting Type :

Surface Mount

Max Collector Current :

500mA

Packaging :

Tape and Reel (TR)

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 50mA 5V

Continuous Collector Current :

-500mA

Transistor Application :

SWITCHING

Max Power Dissipation :

200mW

Number of Elements :

1

Factory Lead Time :

13 Weeks

Base Part Number :

DTB123

Terminal Form :

Gull wing

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 4.5

Terminal Finish :

TIN SILVER COPPER