DTB113E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Power - Max :

200mW

Number of Terminations :

3

HTS Code :

8541.21.00.75

Resistor - Base (R1) :

1 k Ω

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Terminal Position :

Dual

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Operating Temperature (Max) :

150°C

Number of Elements :

1

Current - Collector Cutoff (Max) :

500nA

Additional Feature :

DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1

Max Power Dissipation :

200mW

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

300mV

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-G3

Factory Lead Time :

13 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Published :

2015

Transition Frequency :

200MHz

Terminal Form :

Gull wing

VCEsat-Max :

0.3 V

Resistor - Emitter Base (R2) :

1 k Ω

Qualification Status :

Not Qualified

Frequency - Transition :

200MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

33 @ 50mA 5V

Mount :

Surface Mount

Transistor Type :

PNP - Pre-Biased

Transistor Element Material :

SILICON

Max Breakdown Voltage :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

not_compliant

Collector Emitter Breakdown Voltage :

50V

Polarity/Channel Type :

PNP

Max Collector Current :

500mA

Pin Count :

3

ECCN Code :

EAR99

Package / Case :

TO-236-3, SC-59, SOT-23-3