DTB113E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Elements :

1

JESD-30 Code :

R-PDSO-G3

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Current - Collector Cutoff (Max) :

500nA

Max Power Dissipation :

200mW

Additional Feature :

DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1

Published :

2015

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Reach Compliance Code :

not_compliant

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Collector Emitter Voltage (VCEO) :

300mV

VCEsat-Max :

0.3 V

Max Breakdown Voltage :

50V

Frequency - Transition :

200MHz

Number of Terminations :

3

Resistor - Emitter Base (R2) :

1 k Ω

Max Collector Current :

500mA

Operating Temperature (Max) :

150°C

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Polarity/Channel Type :

PNP

Mount :

Surface Mount

Resistor - Base (R1) :

1 k Ω

Transition Frequency :

200MHz

Factory Lead Time :

13 Weeks

Transistor Type :

PNP - Pre-Biased

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

200mW

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

33 @ 50mA 5V

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

50V

HTS Code :

8541.21.00.75