DMG9926USD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Fall Time (Typ) :

21.7 ns

Gate Charge (Qg) (Max) @ Vgs :

8.8nC @ 4.5V

Element Configuration :

Dual

Continuous Drain Current (ID) :

8A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

64.8 ns

Turn On Delay Time :

13.2 ns

Rds On (Max) @ Id, Vgs :

24m Ω @ 8.2A, 4.5V

Width :

3.95mm

Number of Terminations :

8

FET Feature :

Logic Level Gate

Pulsed Drain Current-Max (IDM) :

30A

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn)

Pin Count :

8

FET Type :

2 N-Channel (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Resistance :

24mOhm

Packaging :

Digi-Reel®

Length :

4.95mm

Lead Free :

Lead Free

Drain Current-Max (Abs) (ID) :

8A

Mount :

Surface Mount

Transistor Application :

SWITCHING

Additional Feature :

High Reliability

Base Part Number :

DMG9926USD

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

40

Rise Time :

12.6ns

Gate to Source Voltage (Vgs) :

8V

Drain to Source Breakdown Voltage :

20V

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Weight :

850.995985mg

Number of Pins :

8

JESD-609 Code :

e3

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Max Power Dissipation :

1.3W

Input Capacitance (Ciss) (Max) @ Vds :

867pF @ 15V

Number of Elements :

2

Power Dissipation :

1.3W

Height :

1.5mm

Vgs(th) (Max) @ Id :

900mV @ 250μA

Published :

2009

Drain to Source Voltage (Vdss) :

20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

15 Weeks

Radiation Hardening :

No