DMG963H50R

Manufacturer :

Panasonic

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Factory Lead Time :

10 Weeks

Max Power Dissipation :

125mW

Vce Saturation (Max) @ Ib, Ic :

250mV @ 500µA, 10mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

ECCN Code :

EAR99

Package / Case :

SOT-665

Base Part Number :

DMG963

Collector Emitter Breakdown Voltage :

50V

Number of Elements :

2

Terminal Form :

Flat

Width :

1.2mm

Number of Terminations :

5

Length :

1.6mm

RoHS Status :

RoHS Compliant

Reach Compliance Code :

Unknown

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Element Configuration :

Dual

Number of Pins :

5

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Current - Collector Cutoff (Max) :

500nA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistor - Base (R1) :

47k Ω, 10k Ω

Resistor - Emitter Base (R2) :

47k Ω

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Height :

500μm

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Max Operating Temperature :

150°C

Max Breakdown Voltage :

50V

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Polarity :

NPN, PNP

Collector Emitter Voltage (VCEO) :

250mV

Continuous Collector Current :

-100mA

Max Collector Current :

100mA