DMG904010R

Manufacturer :

Panasonic

Product Category :

Transistors - Bipolar (BJT) - Arrays

Length :

1.6mm

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

300mV

hFE Min :

210

HTS Code :

8541.21.00.75

Continuous Collector Current :

-100mA

Max Collector Current :

100mA

Current - Collector Cutoff (Max) :

100μA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Breakdown Voltage :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

210 @ 2mA 10V

Number of Elements :

2

Transistor Application :

AMPLIFIER

RoHS Status :

RoHS Compliant

Max Power Dissipation :

125mW

Gain Bandwidth Product :

150MHz

Number of Pins :

6

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

Reach Compliance Code :

Unknown

Polarity :

NPN, PNP

Factory Lead Time :

10 Weeks

Published :

2009

Power - Max :

125mW

Base Part Number :

DMG90401

Transition Frequency :

150MHz

Package / Case :

SOT-563, SOT-666

Element Configuration :

Dual

ECCN Code :

EAR99

Width :

1.2mm

Height :

500μm

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA

Mount :

Surface Mount

Operating Temperature :

150°C TJ

Packaging :

Tape and Reel (TR)

Terminal Form :

Flat

Collector Emitter Breakdown Voltage :

50V

Transistor Type :

NPN, PNP