DMG904010R

Manufacturer :

Panasonic

Product Category :

Transistors - Bipolar (BJT) - Arrays

Element Configuration :

Dual

Operating Temperature :

150°C TJ

hFE Min :

210

Continuous Collector Current :

-100mA

HTS Code :

8541.21.00.75

DC Current Gain (hFE) (Min) @ Ic, Vce :

210 @ 2mA 10V

Polarity :

NPN, PNP

Max Power Dissipation :

125mW

Packaging :

Tape and Reel (TR)

Number of Terminations :

6

Width :

1.2mm

Base Part Number :

DMG90401

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

300mV

Reach Compliance Code :

Unknown

Number of Pins :

6

Collector Emitter Breakdown Voltage :

50V

RoHS Status :

RoHS Compliant

Max Collector Current :

100mA

Published :

2009

Max Breakdown Voltage :

50V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Surface Mount

Mounting Type :

Surface Mount

Transition Frequency :

150MHz

Number of Elements :

2

Package / Case :

SOT-563, SOT-666

Transistor Application :

AMPLIFIER

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

100μA

Vce Saturation (Max) @ Ib, Ic :

300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA

Terminal Form :

Flat

Factory Lead Time :

10 Weeks

Gain Bandwidth Product :

150MHz

Height :

500μm

Length :

1.6mm

Power - Max :

125mW

Transistor Type :

NPN, PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)