DMG904010R

Manufacturer :

Panasonic

Product Category :

Transistors - Bipolar (BJT) - Arrays

Operating Temperature :

150°C TJ

Max Breakdown Voltage :

50V

Transistor Application :

AMPLIFIER

Element Configuration :

Dual

Power - Max :

125mW

Package / Case :

SOT-563, SOT-666

HTS Code :

8541.21.00.75

Max Power Dissipation :

125mW

Height :

500μm

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

50V

Reach Compliance Code :

Unknown

hFE Min :

210

Polarity :

NPN, PNP

Length :

1.6mm

RoHS Status :

RoHS Compliant

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Type :

NPN, PNP

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Base Part Number :

DMG90401

Width :

1.2mm

Factory Lead Time :

10 Weeks

Continuous Collector Current :

-100mA

Collector Emitter Voltage (VCEO) :

300mV

Terminal Form :

Flat

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Published :

2009

Number of Pins :

6

Number of Terminations :

6

Gain Bandwidth Product :

150MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

210 @ 2mA 10V

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Transition Frequency :

150MHz

Max Collector Current :

100mA

Mount :

Surface Mount

Current - Collector Cutoff (Max) :

100μA