DMG963HE0R

Manufacturer :

Panasonic

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Height :

500μm

Continuous Collector Current :

-100mA

Element Configuration :

Dual

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Max Operating Temperature :

150°C

Polarity :

NPN, PNP

Number of Pins :

5

Package / Case :

SOT-665

Packaging :

Tape and Reel (TR)

Reach Compliance Code :

Unknown

RoHS Status :

RoHS Compliant

Width :

1.2mm

Resistor - Emitter Base (R2) :

10k Ω, 47k Ω

Max Breakdown Voltage :

30V

Collector Emitter Voltage (VCEO) :

250mV

Max Collector Current :

100mA

Max Power Dissipation :

125mW

Collector Emitter Breakdown Voltage :

30V

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

250mV @ 500μA, 10mA / 1.2V @ 330μA, 50mA

Mount :

Surface Mount

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V / 80 @ 5mA 10V

Current - Collector Cutoff (Max) :

500nA

ECCN Code :

EAR99

Base Part Number :

DMG963

Number of Terminations :

5

Length :

1.6mm

Voltage - Collector Emitter Breakdown (Max) :

50V 30V

Published :

2010

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Factory Lead Time :

10 Weeks

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Resistor - Base (R1) :

10k Ω

Mounting Type :

Surface Mount

Terminal Form :

Flat