DMG9926UDM-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

980mW

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Logic Level Gate

Turn On Delay Time :

8.4 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

28m Ω @ 8.2A, 4.5V

Transistor Application :

SWITCHING

Base Part Number :

DMG9926UDM

Drain to Source Breakdown Voltage :

20V

Pbfree Code :

yes

FET Type :

2 N-Channel (Dual) Common Drain

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Radiation Hardening :

No

Lead Free :

Lead Free

Terminal Form :

Gull wing

Power Dissipation :

980mW

REACH SVHC :

No SVHC

Drain to Source Voltage (Vdss) :

20V

Turn-Off Delay Time :

40.4 ns

Gate Charge (Qg) (Max) @ Vgs :

8.3nC @ 4.5V

Number of Terminations :

6

Number of Elements :

2

JESD-609 Code :

e3

Package / Case :

SOT-23-6

Number of Pins :

6

Mount :

Surface Mount

Length :

3.1mm

Pin Count :

6

Factory Lead Time :

15 Weeks

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

856pF @ 10V

Gate to Source Voltage (Vgs) :

8V

Height :

1.3mm

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

4.2A

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

8.9 ns

Peak Reflow Temperature (Cel) :

260

Rise Time :

8.2ns

Additional Feature :

High Reliability

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

900mV @ 250μA

ECCN Code :

EAR99

Width :

1.7mm

Published :

2009

Terminal Finish :

Matte Tin (Sn)