DMG9926UDM-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mount :

Surface Mount

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

900mV @ 250μA

Drain to Source Breakdown Voltage :

20V

Max Power Dissipation :

980mW

Number of Terminations :

6

Width :

1.7mm

Pbfree Code :

yes

Transistor Element Material :

SILICON

Fall Time (Typ) :

8.9 ns

Peak Reflow Temperature (Cel) :

260

Drain to Source Voltage (Vdss) :

20V

Transistor Application :

SWITCHING

Power Dissipation :

980mW

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

2

Turn-Off Delay Time :

40.4 ns

FET Feature :

Logic Level Gate

Continuous Drain Current (ID) :

4.2A

Input Capacitance (Ciss) (Max) @ Vds :

856pF @ 10V

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

8V

Gate Charge (Qg) (Max) @ Vgs :

8.3nC @ 4.5V

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn)

Pin Count :

6

Additional Feature :

High Reliability

Mounting Type :

Surface Mount

FET Type :

2 N-Channel (Dual) Common Drain

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Package / Case :

SOT-23-6

Lead Free :

Lead Free

Height :

1.3mm

Factory Lead Time :

15 Weeks

Rise Time :

8.2ns

Rds On (Max) @ Id, Vgs :

28m Ω @ 8.2A, 4.5V

Terminal Form :

Gull wing

Number of Pins :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2009

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Base Part Number :

DMG9926UDM

Turn On Delay Time :

8.4 ns

Operating Temperature :

-55°C~150°C TJ

Length :

3.1mm