BUL128FP
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- Mfr.Part #
- BUL128FP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 400V 4A TO220FP
- Stock
- 10,153
- In Stock ：
- 10,153
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- Packaging :
- Tube
- Package / Case :
- TO-220-3 Full Pack
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Emitter Base Voltage (VEBO) :
- 9V
- Case Connection :
- Isolated
- Element Configuration :
- Single
- JEDEC-95 Code :
- TO-220AB
- Base Part Number :
- BUL128
- Collector Emitter Voltage (VCEO) :
- 400V
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Max Collector Current :
- 4A
- Mounting Type :
- Through Hole
- Power Dissipation :
- 31W
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 31W
- Collector Base Voltage (VCBO) :
- 700V
- Number of Terminations :
- 3
- hFE Min :
- 10
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 14 @ 2A 5V
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1A, 4A
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 400V
- Current - Collector Cutoff (Max) :
- 100μA
- Datasheets
- BUL128FP
BUL128FP Documents
NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
BUL128FP Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 14 @ 2A 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 1A, 4A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.Collector current can be as low as 4A volts at its maximum.
BUL128FP Features
the DC current gain for this device is 14 @ 2A 5V
the vce saturation(Max) is 500mV @ 1A, 4A
the emitter base voltage is kept at 9V
BUL128FP Applications
There are a lot of STMicroelectronics
BUL128FP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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