BUL128FP

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Mfr.Part #
BUL128FP
Manufacturer
STMicroelectronics
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
TRANS NPN 400V 4A TO220FP
Stock
10,153
In Stock :
10,153

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Element Configuration :
Single
Number of Terminations :
3
Operating Temperature :
150°C TJ
Power Dissipation :
31W
Pbfree Code :
yes
Mounting Type :
Through Hole
Collector Emitter Breakdown Voltage :
400V
JESD-609 Code :
e3
Vce Saturation (Max) @ Ib, Ic :
500mV @ 1A, 4A
Number of Pins :
3
Base Part Number :
BUL128
Emitter Base Voltage (VEBO) :
9V
ECCN Code :
EAR99
Current - Collector Cutoff (Max) :
100μA
Max Collector Current :
4A
Collector Emitter Voltage (VCEO) :
400V
Transistor Element Material :
SILICON
Pin Count :
3
Collector Base Voltage (VCBO) :
700V
Mount :
Through Hole
Transistor Application :
SWITCHING
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-220-3 Full Pack
Max Power Dissipation :
31W
JEDEC-95 Code :
TO-220AB
Contact Plating :
Tin
Radiation Hardening :
No
REACH SVHC :
No SVHC
DC Current Gain (hFE) (Min) @ Ic, Vce :
14 @ 2A 5V
Case Connection :
Isolated
Polarity/Channel Type :
NPN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Transistor Type :
NPN
hFE Min :
10
Packaging :
Tube
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BUL128FP from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:150°C TJ, Mounting Type:Through Hole, Number of Pins:3, Base Part Number:BUL128, Package / Case:TO-220-3 Full Pack, BUL128FP pinout, BUL128FP datasheet PDF, BUL128FP amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BUL128FP ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole

BUL128FP Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 14 @ 2A 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 1A, 4A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.Collector current can be as low as 4A volts at its maximum.

BUL128FP Features


the DC current gain for this device is 14 @ 2A 5V
the vce saturation(Max) is 500mV @ 1A, 4A
the emitter base voltage is kept at 9V


BUL128FP Applications


There are a lot of STMicroelectronics
BUL128FP applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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