BUL128D-B
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- Mfr.Part #
- BUL128D-B
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 4A TO220
- Stock
- 8,704
- In Stock ：
- 8,704
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Tin
- Base Part Number :
- BUL128
- Current - Collector Cutoff (Max) :
- 250μA
- Number of Pins :
- 3
- Package / Case :
- TO-220-3
- Operating Temperature :
- 150°C TJ
- JEDEC-95 Code :
- TO-220AB
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 9V
- Mount :
- Through Hole
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Breakdown Voltage :
- 400V
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1A, 4A
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Packaging :
- Tube
- Max Power Dissipation :
- 70W
- Length :
- 10.4mm
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 700V
- Width :
- 4.6mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 12 @ 2A 5V
- Transistor Type :
- NPN
- Radiation Hardening :
- No
- Power Dissipation :
- 70W
- Height :
- 9.15mm
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 500mV
- Collector Emitter Voltage (VCEO) :
- 400V
- Number of Elements :
- 1
- Max Collector Current :
- 4A
- Datasheets
- BUL128D-B
BUL128D-B Documents
NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BUL128D-B Overview
This device has a DC current gain of 12 @ 2A 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 1A, 4A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 9V.A maximum collector current of 4A volts is possible.
BUL128D-B Features
the DC current gain for this device is 12 @ 2A 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1A, 4A
the emitter base voltage is kept at 9V
BUL128D-B Applications
There are a lot of STMicroelectronics
BUL128D-B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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