BUL128D-B
- Mfr.Part #
- BUL128D-B
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 4A TO220
- Stock
- 8,704
- In Stock :
- 8,704
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Radiation Hardening :
- No
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 250μA
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 70W
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 8 Weeks
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1A, 4A
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 4A
- Element Configuration :
- Single
- Mount :
- Through Hole
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 500mV
- JEDEC-95 Code :
- TO-220AB
- Packaging :
- Tube
- Width :
- 4.6mm
- Height :
- 9.15mm
- Base Part Number :
- BUL128
- Length :
- 10.4mm
- Emitter Base Voltage (VEBO) :
- 9V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 12 @ 2A 5V
- JESD-609 Code :
- e3
- Package / Case :
- TO-220-3
- Collector Emitter Voltage (VCEO) :
- 400V
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Collector Base Voltage (VCBO) :
- 700V
- Collector Emitter Breakdown Voltage :
- 400V
- Max Power Dissipation :
- 70W
- Contact Plating :
- Tin
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Number of Pins :
- 3
- Datasheets
- BUL128D-B

NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BUL128D-B Overview
This device has a DC current gain of 12 @ 2A 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 1A, 4A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 9V.A maximum collector current of 4A volts is possible.
BUL128D-B Features
the DC current gain for this device is 12 @ 2A 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1A, 4A
the emitter base voltage is kept at 9V
BUL128D-B Applications
There are a lot of STMicroelectronics
BUL128D-B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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