BUL128D-B
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- Mfr.Part #
- BUL128D-B
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 4A TO220
- Stock
- 8,704
- In Stock ：
- 8,704
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Package / Case :
- TO-220-3
- Width :
- 4.6mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 12 @ 2A 5V
- JESD-609 Code :
- e3
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Base Part Number :
- BUL128
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Contact Plating :
- Tin
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 70W
- Max Power Dissipation :
- 70W
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Through Hole
- Collector Base Voltage (VCBO) :
- 700V
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 250μA
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 400V
- ECCN Code :
- EAR99
- JEDEC-95 Code :
- TO-220AB
- Pin Count :
- 3
- Packaging :
- Tube
- Mount :
- Through Hole
- Number of Elements :
- 1
- Height :
- 9.15mm
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1A, 4A
- Number of Terminations :
- 3
- Length :
- 10.4mm
- Collector Emitter Saturation Voltage :
- 500mV
- Emitter Base Voltage (VEBO) :
- 9V
- Max Collector Current :
- 4A
- Collector Emitter Voltage (VCEO) :
- 400V
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 8 Weeks
- Datasheets
- BUL128D-B
BUL128D-B Documents
NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BUL128D-B Overview
This device has a DC current gain of 12 @ 2A 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 1A, 4A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 9V.A maximum collector current of 4A volts is possible.
BUL128D-B Features
the DC current gain for this device is 12 @ 2A 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1A, 4A
the emitter base voltage is kept at 9V
BUL128D-B Applications
There are a lot of STMicroelectronics
BUL128D-B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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