BUL128D-B
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- Mfr.Part #
- BUL128D-B
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 4A TO220
- Stock
- 8,704
- In Stock ：
- 8,704
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 700V
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Packaging :
- Tube
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 12 @ 2A 5V
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Number of Terminations :
- 3
- Package / Case :
- TO-220-3
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 500mV
- Current - Collector Cutoff (Max) :
- 250μA
- Collector Emitter Breakdown Voltage :
- 400V
- Transistor Application :
- SWITCHING
- Base Part Number :
- BUL128
- Element Configuration :
- Single
- Length :
- 10.4mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 400V
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 70W
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Mount :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 4A
- Radiation Hardening :
- No
- Height :
- 9.15mm
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 70W
- JEDEC-95 Code :
- TO-220AB
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1A, 4A
- Lead Free :
- Lead Free
- Factory Lead Time :
- 8 Weeks
- Emitter Base Voltage (VEBO) :
- 9V
- Width :
- 4.6mm
- Datasheets
- BUL128D-B
NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BUL128D-B Overview
This device has a DC current gain of 12 @ 2A 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 1A, 4A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 9V.A maximum collector current of 4A volts is possible.
BUL128D-B Features
the DC current gain for this device is 12 @ 2A 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1A, 4A
the emitter base voltage is kept at 9V
BUL128D-B Applications
There are a lot of STMicroelectronics
BUL128D-B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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