BUL128D-B
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- Mfr.Part #
- BUL128D-B
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 4A TO220
- Stock
- 8,704
- In Stock ：
- 8,704
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Tin
- Package / Case :
- TO-220-3
- Transistor Type :
- NPN
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 70W
- Collector Emitter Breakdown Voltage :
- 400V
- Emitter Base Voltage (VEBO) :
- 9V
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Base Part Number :
- BUL128
- Collector Emitter Saturation Voltage :
- 500mV
- Number of Terminations :
- 3
- Max Collector Current :
- 4A
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 250μA
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 8 Weeks
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 700V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1A, 4A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Height :
- 9.15mm
- JEDEC-95 Code :
- TO-220AB
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 400V
- Lead Free :
- Lead Free
- Width :
- 4.6mm
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 12 @ 2A 5V
- Number of Elements :
- 1
- Max Power Dissipation :
- 70W
- Polarity/Channel Type :
- NPN
- Length :
- 10.4mm
- Mounting Type :
- Through Hole
- Datasheets
- BUL128D-B
NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BUL128D-B Overview
This device has a DC current gain of 12 @ 2A 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 1A, 4A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 9V.A maximum collector current of 4A volts is possible.
BUL128D-B Features
the DC current gain for this device is 12 @ 2A 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1A, 4A
the emitter base voltage is kept at 9V
BUL128D-B Applications
There are a lot of STMicroelectronics
BUL128D-B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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