BUL128D-B

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Mfr.Part #
BUL128D-B
Manufacturer
STMicroelectronics
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 400V 4A TO220
Stock
8,704
In Stock :
8,704

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Elements :
1
Lifecycle Status :
ACTIVE (Last Updated: 7 months ago)
Radiation Hardening :
No
Operating Temperature :
150°C TJ
Current - Collector Cutoff (Max) :
250μA
Number of Terminations :
3
Polarity/Channel Type :
NPN
Power Dissipation :
70W
Transistor Element Material :
SILICON
Factory Lead Time :
8 Weeks
RoHS Status :
ROHS3 Compliant
Vce Saturation (Max) @ Ib, Ic :
500mV @ 1A, 4A
Transistor Application :
SWITCHING
Max Collector Current :
4A
Element Configuration :
Single
Mount :
Through Hole
Transistor Type :
NPN
Collector Emitter Saturation Voltage :
500mV
JEDEC-95 Code :
TO-220AB
Packaging :
Tube
Width :
4.6mm
Height :
9.15mm
Base Part Number :
BUL128
Length :
10.4mm
Emitter Base Voltage (VEBO) :
9V
DC Current Gain (hFE) (Min) @ Ic, Vce :
12 @ 2A 5V
JESD-609 Code :
e3
Package / Case :
TO-220-3
Collector Emitter Voltage (VCEO) :
400V
Lead Free :
Lead Free
Mounting Type :
Through Hole
Collector Base Voltage (VCBO) :
700V
Collector Emitter Breakdown Voltage :
400V
Max Power Dissipation :
70W
Contact Plating :
Tin
REACH SVHC :
No SVHC
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pin Count :
3
Number of Pins :
3
Datasheets
BUL128D-B
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BUL128D-B from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Number of Terminations:3, Base Part Number:BUL128, Package / Case:TO-220-3, Mounting Type:Through Hole, Number of Pins:3, BUL128D-B pinout, BUL128D-B datasheet PDF, BUL128D-B amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BUL128D-B ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BUL128D-B


NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

BUL128D-B Overview


This device has a DC current gain of 12 @ 2A 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 1A, 4A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 9V.A maximum collector current of 4A volts is possible.

BUL128D-B Features


the DC current gain for this device is 12 @ 2A 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1A, 4A
the emitter base voltage is kept at 9V


BUL128D-B Applications


There are a lot of STMicroelectronics
BUL128D-B applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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