BUL128-K
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- Mfr.Part #
- BUL128-K
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 4A TO220
- Stock
- 45,048
- In Stock ：
- 45,048
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 400V
- Power - Max :
- 70W
- Transistor Type :
- NPN
- Supplier Device Package :
- TO-220AB
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 500mV
- Max Collector Current :
- 4A
- Voltage - Collector Emitter Breakdown (Max) :
- 400V
- Current - Collector (Ic) (Max) :
- 4A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 14 @ 2A 5V
- Mount :
- Through Hole
- Current - Collector Cutoff (Max) :
- 200μA
- Base Part Number :
- BUL128
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1A, 4A
- Max Power Dissipation :
- 70W
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Package / Case :
- TO-220-3
- Datasheets
- BUL128-K
NPN 150°C TJ 200μA TO-220-3 Tube Through Hole
BUL128-K Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 14 @ 2A 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 400V maximal voltage - Collector EmSingle BJT transistorter Breakdown.When collector current reaches its maximum, it can reach 4A volts.
BUL128-K Features
the DC current gain for this device is 14 @ 2A 5V
the vce saturation(Max) is 500mV @ 1A, 4A
the supplier device package of TO-220AB
BUL128-K Applications
There are a lot of STMicroelectronics
BUL128-K applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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