BUL1203EFP
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- Mfr.Part #
- BUL1203EFP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 550V 5A TO220-3
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1A, 3A
- Collector Base Voltage (VCBO) :
- 1.2kV
- Contact Plating :
- Tin
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- JESD-30 Code :
- R-PSFM-T3
- Emitter Base Voltage (VEBO) :
- 9V
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Mount :
- Through Hole
- Max Collector Current :
- 5A
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Packaging :
- Tube
- Collector Emitter Voltage (VCEO) :
- 550V
- Base Part Number :
- BUL1203
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 550V
- hFE Min :
- 10
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- not_compliant
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- JEDEC-95 Code :
- TO-220AB
- Element Configuration :
- Single
- Package / Case :
- TO-220-3 Full Pack
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 36W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 9 @ 2A 5V
- Max Power Dissipation :
- 36W
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- NRND (Last Updated: 7 months ago)
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100μA
- Case Connection :
- Isolated
- Datasheets
- BUL1203EFP
NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
BUL1203EFP Overview
In this device, the DC current gain is 9 @ 2A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 1A, 3A.Keeping the emitter base voltage at 9V allows for a high level of efficiency.Maximum collector currents can be below 5A volts.
BUL1203EFP Features
the DC current gain for this device is 9 @ 2A 5V
the vce saturation(Max) is 1.5V @ 1A, 3A
the emitter base voltage is kept at 9V
BUL1203EFP Applications
There are a lot of STMicroelectronics
BUL1203EFP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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