BUL1102E
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- Mfr.Part #
- BUL1102E
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 450V 4A TO220
- Stock
- 5,940
- In Stock ：
- 5,940
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-220AB
- Contact Plating :
- Tin
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Mount :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 450V
- Number of Elements :
- 1
- Factory Lead Time :
- 8 Weeks
- Transistor Type :
- NPN
- Case Connection :
- COLLECTOR
- Number of Terminations :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- Single
- Max Power Dissipation :
- 70W
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100μA
- Power Dissipation :
- 70W
- Max Collector Current :
- 4A
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 12 @ 2A 5V
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Packaging :
- Tube
- Base Part Number :
- BUL1102
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 400mA, 2A
- Collector Emitter Voltage (VCEO) :
- 450V
- Emitter Base Voltage (VEBO) :
- 12V
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Terminal Position :
- Single
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Package / Case :
- TO-220-3
- Datasheets
- BUL1102E
NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BUL1102E Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 12 @ 2A 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 400mA, 2A.If the emitter base voltage is kept at 12V, a high level of efficiency can be achieved.Collector current can be as low as 4A volts at its maximum.
BUL1102E Features
the DC current gain for this device is 12 @ 2A 5V
the vce saturation(Max) is 1.5V @ 400mA, 2A
the emitter base voltage is kept at 12V
BUL1102E Applications
There are a lot of STMicroelectronics
BUL1102E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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