BUL1102E

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Mfr.Part #
BUL1102E
Manufacturer
STMicroelectronics
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 450V 4A TO220
Stock
5,940
In Stock :
5,940

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Application :
SWITCHING
JEDEC-95 Code :
TO-220AB
Contact Plating :
Tin
Mounting Type :
Through Hole
Pin Count :
3
Mount :
Through Hole
Collector Emitter Breakdown Voltage :
450V
Number of Elements :
1
Factory Lead Time :
8 Weeks
Transistor Type :
NPN
Case Connection :
COLLECTOR
Number of Terminations :
3
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Configuration :
Single
Max Power Dissipation :
70W
Polarity/Channel Type :
NPN
Current - Collector Cutoff (Max) :
100μA
Power Dissipation :
70W
Max Collector Current :
4A
RoHS Status :
ROHS3 Compliant
REACH SVHC :
No SVHC
DC Current Gain (hFE) (Min) @ Ic, Vce :
12 @ 2A 5V
Number of Pins :
3
ECCN Code :
EAR99
Packaging :
Tube
Base Part Number :
BUL1102
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 400mA, 2A
Collector Emitter Voltage (VCEO) :
450V
Emitter Base Voltage (VEBO) :
12V
Transistor Element Material :
SILICON
Operating Temperature :
150°C TJ
Terminal Position :
Single
JESD-609 Code :
e3
Radiation Hardening :
No
Package / Case :
TO-220-3
Datasheets
BUL1102E
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BUL1102E from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Number of Pins:3, Base Part Number:BUL1102, Operating Temperature:150°C TJ, Package / Case:TO-220-3, BUL1102E pinout, BUL1102E datasheet PDF, BUL1102E amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BUL1102E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BUL1102E


NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

BUL1102E Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 12 @ 2A 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 400mA, 2A.If the emitter base voltage is kept at 12V, a high level of efficiency can be achieved.Collector current can be as low as 4A volts at its maximum.

BUL1102E Features


the DC current gain for this device is 12 @ 2A 5V
the vce saturation(Max) is 1.5V @ 400mA, 2A
the emitter base voltage is kept at 12V


BUL1102E Applications


There are a lot of STMicroelectronics
BUL1102E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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