BUL1102EFP

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Mfr.Part #
BUL1102EFP
Manufacturer
STMicroelectronics
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
TRANS NPN 450V 4A TO220FP
Stock
2,662
In Stock :
2,662

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Mounting Type :
Through Hole
RoHS Status :
ROHS3 Compliant
Terminal Position :
Single
Max Power Dissipation :
30W
Polarity/Channel Type :
NPN
JEDEC-95 Code :
TO-220AB
Power - Max :
30W
Factory Lead Time :
8 Weeks
Collector Emitter Voltage (VCEO) :
450V
Mount :
Through Hole
Emitter Base Voltage (VEBO) :
12V
Transistor Application :
SWITCHING
Base Part Number :
BUL1102
Case Connection :
Isolated
Contact Plating :
Tin
Number of Pins :
3
Current - Collector Cutoff (Max) :
100μA
REACH SVHC :
No SVHC
Max Collector Current :
4A
Transistor Element Material :
SILICON
Collector Emitter Breakdown Voltage :
450V
JESD-609 Code :
e3
Power Dissipation :
70W
DC Current Gain (hFE) (Min) @ Ic, Vce :
12 @ 2A 5V
Operating Temperature :
150°C TJ
Transistor Type :
NPN
Lifecycle Status :
ACTIVE (Last Updated: 7 months ago)
Number of Terminations :
3
Packaging :
Tube
ECCN Code :
EAR99
Pin Count :
3
Package / Case :
TO-220-3 Full Pack
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 400mA, 2A
Radiation Hardening :
No
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Configuration :
Single
Datasheets
BUL1102EFP
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BUL1102EFP from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Base Part Number:BUL1102, Number of Pins:3, Operating Temperature:150°C TJ, Number of Terminations:3, Package / Case:TO-220-3 Full Pack, BUL1102EFP pinout, BUL1102EFP datasheet PDF, BUL1102EFP amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BUL1102EFP ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BUL1102EFP


NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole

BUL1102EFP Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 12 @ 2A 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 12V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 4A volts.

BUL1102EFP Features


the DC current gain for this device is 12 @ 2A 5V
the vce saturation(Max) is 1.5V @ 400mA, 2A
the emitter base voltage is kept at 12V


BUL1102EFP Applications


There are a lot of STMicroelectronics
BUL1102EFP applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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