BSZ0909LSATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Channel Mode :

Enhancement

Qualification :

-

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

MSL :

MSL 1 - Unlimited

Transistor Polarity :

N-Channel

Base Product Number :

BSZ0909

Gate Charge (Qg) (Max) @ Vgs :

26 nC @ 10 V

Product Status :

Active

Channel Type :

N Channel

Rise Time :

5.2 ns

FET Feature :

-

Vgs (Max) :

±20V

Series :

OptiMOS™ 5

Continuous Drain Current Id :

40A

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

Power Dissipation :

-

Packaging :

MouseReel

Rds On (Max) @ Id, Vgs :

3mOhm @ 20A, 10V

Power Dissipation (Max) :

-

Transistor Type :

1 N-Channel

Minimum Operating Temperature :

- 55 C

Mounting Style :

SMD/SMT

Vgs(th) (Max) @ Id :

2V @ 250μA

FET Type :

N-Channel

Operating Temperature :

-55°C ~ 150°C (TJ)

Mounting Type :

Surface Mount

Maximum Operating Temperature :

+ 150 C

RoHS :

Details

Current - Continuous Drain (Id) @ 25°C :

19A (Ta), 40A (Tc)

Drain to Source Voltage (Vdss) :

30 V

Package / Case :

TSDSON-8

Number of Channels :

1 Channel

Input Capacitance (Ciss) (Max) @ Vds :

1700 pF @ 15 V

Supplier Device Package :

PG-TDSON-8 FL