BSZ042N04NS
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- Mfr.Part #
- BSZ042N04NS
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 8,289
- In Stock ：
- 8,289
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Max Dual Supply Voltage :
- 40V
- Qualification Status :
- Not Qualified
- Continuous Drain Current (ID) :
- 40A
- Rise Time :
- 3.4ns
- Case Connection :
- DRAIN
- Gate to Source Voltage (Vgs) :
- 20V
- Reach Compliance Code :
- not_compliant
- Vgs (Max) :
- ±20V
- Packaging :
- Tape and Reel (TR)
- Power Dissipation-Max :
- 2.1W Ta 69W Tc
- Lead Free :
- Contains Lead
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- Package / Case :
- 8-PowerVDFN
- Pulsed Drain Current-Max (IDM) :
- 160A
- Vgs(th) (Max) @ Id :
- 4V @ 36μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn On Delay Time :
- 14 ns
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- No
- Terminal Finish :
- Tin (Sn)
- Additional Feature :
- AVALANCHE RATED, HIGH VOLTAGE
- ECCN Code :
- EAR99
- Factory Lead Time :
- 18 Weeks
- Transistor Application :
- SWITCHING
- Series :
- OptiMOS™
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-609 Code :
- e3
- Avalanche Energy Rating (Eas) :
- 150 mJ
- Drain-source On Resistance-Max :
- 0.0042Ohm
- Rds On (Max) @ Id, Vgs :
- 4.2m Ω @ 20A, 10V
- Number of Terminations :
- 5
- Power Dissipation :
- 69W
- Number of Elements :
- 1
- Halogen Free :
- Halogen Free
- JESD-30 Code :
- R-PDSO-N5
- Terminal Form :
- NO LEAD
- Published :
- 2003
- Gate Charge (Qg) (Max) @ Vgs :
- 46nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 8
- Turn-Off Delay Time :
- 20 ns
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 3700pF @ 20V
- Fall Time (Typ) :
- 4.2 ns
- Number of Pins :
- 8
- Operating Mode :
- ENHANCEMENT MODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Datasheets
- BSZ042N04NS
N-Channel Tape & Reel (TR) 4.2m Ω @ 20A, 10V ±20V 3700pF @ 20V 46nC @ 10V 8-PowerVDFN
BSZ042N04NSGATMA1 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 150 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3700pF @ 20V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 40A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 20 ns.Peak drain current is 160A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In addition to 40V, it supports dual voltages up to the maximum.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
BSZ042N04NSGATMA1 Features
the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 40A
the turn-off delay time is 20 ns
based on its rated peak drain current 160A.
BSZ042N04NSGATMA1 Applications
There are a lot of Infineon Technologies
BSZ042N04NSGATMA1 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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