BSZ034N04LSATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

70 mJ

Package / Case :

8-PowerTDFN

Current - Continuous Drain (Id) @ 25°C :

19A Ta 40A Tc

Published :

2012

Rise Time :

4ns

Halogen Free :

Halogen Free

Lead Free :

Contains Lead

JESD-30 Code :

S-PDSO-N3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

8

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 20V

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

3

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

3.4m Ω @ 20A, 10V

Packaging :

Tape and Reel (TR)

Max Dual Supply Voltage :

40V

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Reach Compliance Code :

not_compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Vgs(th) (Max) @ Id :

2V @ 250μA

Series :

Automotive, AEC-Q101, OptiMOS™

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

19A

Terminal Position :

Dual

JESD-609 Code :

e3

Number of Elements :

1

Continuous Drain Current (ID) :

40A

Terminal Form :

NO LEAD

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

160A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.0046Ohm

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

2.1W Ta 52W Tc

Factory Lead Time :

18 Weeks