BSO215C

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

HTS Code :

8541.29.00.95

Additional Feature :

LOGIC LEVAL

Gate Charge (Qg) (Max) @ Vgs :

11.5nC @ 10V

Pulsed Drain Current-Max (IDM) :

14.8A

JESD-609 Code :

e0

Mount :

Surface Mount

Pin Count :

8

Operating Temperature :

-55°C~150°C TJ

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

100m Ω @ 3.7A, 10V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Max Power Dissipation :

2W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Elements :

2

Terminal Finish :

Tin/Lead (Sn/Pb)

JESD-30 Code :

R-PDSO-G8

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

26 mJ

Mounting Type :

Surface Mount

FET Feature :

Logic Level Gate

Input Capacitance (Ciss) (Max) @ Vds :

246pF @ 25V

Drain-source On Resistance-Max :

0.1Ohm

Current Rating :

3.1A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

3.7A

Series :

SIPMOS®

Drain to Source Voltage (Vdss) :

20V

FET Type :

N and P-Channel

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

20V

Reach Compliance Code :

Unknown

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Published :

1999

Vgs(th) (Max) @ Id :

2V @ 10µA

RoHS Status :

Non-RoHS Compliant