BSO200N03

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mounting Type :

Surface Mount

Fall Time (Typ) :

2.6 ns

Number of Elements :

1

Current Rating :

7A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain Current-Max (Abs) (ID) :

7A

Drain to Source Breakdown Voltage :

30V

Input Capacitance (Ciss) (Max) @ Vds :

840pF @ 15V

Feedback Cap-Max (Crss) :

46 pF

Number of Pins :

8

Number of Terminations :

8

Termination :

SMD/SMT

Terminal Position :

Dual

Voltage - Rated DC :

30V

Published :

2006

Terminal Form :

Gull wing

Terminal Finish :

MATTE TIN

RoHS Status :

RoHS Compliant

Mount :

Surface Mount

Transistor Application :

SWITCHING

Pin Count :

8

Resistance :

27mOhm

Vgs(th) (Max) @ Id :

2V @ 10µA

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Rise Time :

2.6ns

Series :

OptiMOS™

Power Dissipation-Max :

1.56W Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Turn-Off Delay Time :

12 ns

Nominal Vgs :

1.6 V

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

20m Ω @ 8.8A, 10V

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

6.5nC @ 5V

Power Dissipation :

1.56W

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

7A Ta

Continuous Drain Current (ID) :

7A

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Threshold Voltage :

1.6V

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

260

JEDEC-95 Code :

MS-012AA

Configuration :

SINGLE WITH BUILT-IN DIODE

Dual Supply Voltage :

30V

FET Type :

N-Channel