BSO204PNTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

35.8nC @ 4.5V

DS Breakdown Voltage-Min :

20V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Series :

OptiMOS™

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Drain Current-Max (Abs) (ID) :

7A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

2 P-Channel (Dual)

Vgs(th) (Max) @ Id :

1.2V @ 60μA

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

RoHS Status :

Non-RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1513pF @ 15V

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

20V

Number of Pins :

8

Operating Mode :

ENHANCEMENT MODE

Power - Max :

2W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Published :

2008

Max Power Dissipation :

2W

Mount :

Surface Mount

Number of Terminations :

8

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

7A

Base Part Number :

BSO204

Avalanche Energy Rating (Eas) :

63 mJ

Rds On (Max) @ Id, Vgs :

30m Ω @ 7A, 4.5V

FET Feature :

Logic Level Gate

Drain-source On Resistance-Max :

0.03Ohm

Number of Elements :

2